Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Marian C. Hargis"'
Autor:
Jerry M. Woodall, M. R. Melloch, Andrew M. Weiner, Chih-Hung Chen, Marian C. Hargis, Mehmetcan Akbulut
Publikováno v:
IEEE Photonics Technology Letters. 13:85-87
We report high-speed digital modulation of GaAs-AlGaAs light-emitting diodes. Open eye patterns and bit error rates less than 10/sup -9/ were obtained for data rates from 750 Mb/s to 1.7 Gb/s. These results are the first report, to our knowledge, of
Autor:
P.O. Haugsjaa, D. T. McInturff, A.J. Negri, Jerry M. Woodall, Stephen E. Ralph, Marian C. Hargis
Publikováno v:
IEEE Photonics Technology Letters. 8:110-112
We report dramatic differences in the impulse response and wavelength dependence of back versus top illuminated In/sub 0.53/Ga/sub 0.47/As planar metal-semiconductor-metal devices. Via direct measurement of transit-time limited devices we identify th
Publikováno v:
Applied Physics Letters. 67:413-415
We report the direct measurement of the intrinsic photocurrent response of both top and back illuminated planar metal–semiconductor–metal structures. We directly observe the temporal dynamics of the hole transport dependence on applied bias and t
Publikováno v:
Applied Physics Letters. 61:2222-2224
We demonstrate the efficacy of a method for reducing the effects of charge associated with the InP substrate‐InGaAs interface. By incorporating an AlInAs buffer layer we have dramatically improved the performance of InGaAs metal‐semiconductor‐m
Autor:
Carl M. Verber, Marian C. Hargis, David T. McInturff, Zhiping Zhou, Paul W. Juodawlkis, Stephen E. Ralph
Publikováno v:
Ultrafast Electronics and Optoelectronics.
Electroabsorption modulation is demonstrated in low-temperature-grown InGaAs/InAlAs multiple quantum wells exhibiting 600 fs nonlinear absorption recovery associated with anneal-stable Be-As defects. We show that the absorption recovery time, which d
Publikováno v:
High-Speed Electronics and Optoelectronics.
GaSh-based meta1semiconductor-meta1 (MSM) and pi-n photodetectors grown by molecular beam epitaxy have been demonstrated for the first time. These novel devices can offer higher bandwidths and lower excess noise because of the superior hole transport
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