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of 69
pro vyhledávání: '"Marian, Damiano"'
Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the o
Externí odkaz:
http://arxiv.org/abs/2403.02188
Autor:
Schneider, Daniel S., Lucchesi, Leonardo, Reato, Eros, Wang, Zhenyu, Piacentini, Agata, Bolten, Jens, Marian, Damiano, Marin, Enrique G., Radenovic, Aleksandra, Wang, Zhenxing, Fiori, Gianluca, Kis, Andras, Iannaccone, Giuseppe, Neumaier, Daniel, Lemme, Max C.
Publikováno v:
npj 2D Materials and Applications, 8, 35, 2024
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barr
Externí odkaz:
http://arxiv.org/abs/2304.01177
The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Field-Effect Transistors (FET). This option can provide very good lattice
Externí odkaz:
http://arxiv.org/abs/2001.03139
Publikováno v:
Appl. Phys. Lett. 113, 183507 (2018)
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in electronic
Externí odkaz:
http://arxiv.org/abs/1904.09458
Publikováno v:
Phys. Rev. Applied 10, 044063 (2018)
We propose a device concept, based on monolayer stanene, able to provide highly polarized spin currents (up to a $98\%$) with voltage-controlled spin polarization operating at room temperature and with small operating voltage ($0.3$ V). The concept e
Externí odkaz:
http://arxiv.org/abs/1904.09254
Akademický článek
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Publikováno v:
Nanoscale, 9, 19390 (2017)
We explore nanoribbons from topological two-dimensional stanene as channel material in tunnel field effect transistors. This novel technological option offers the possibility to build pure one-dimensional (1D) channel devices (comprised of a 1D chain
Externí odkaz:
http://arxiv.org/abs/1804.03440
Autor:
Marian, Damiano, Dib, Elias, Cusati, Teresa, Marin, Enrique G., Fortunelli, Alessandro, Iannaccone, Giuseppe, Fiori, Gianluca
Publikováno v:
Phys. Rev. Applied 8, 054047 (2017)
In this paper we propose two transistor concepts based on lateral heterostructures of monolayer MoS$_2$, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such
Externí odkaz:
http://arxiv.org/abs/1804.00134
Akademický článek
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Bohmian mechanics is a theory that provides a consistent explanation of quantum phenomena in terms of point particles whose motion is guided by the wave function. In this theory, the state of a system of particles is defined by the actual positions o
Externí odkaz:
http://arxiv.org/abs/1610.01138