Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mariam Hakami"'
Autor:
Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Seunguk Song, Gwangwoo Kim, Zichen Tang, Jui-Han Fu, Mariam Hakami, Vincent Tung, Joan M. Redwing, Eric A. Stach, Roy H. Olsson, Deep Jariwala
Publikováno v:
Nature Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccba798c3517ef862a80136c36893bf0
https://doi.org/10.1038/s41565-023-01399-y
https://doi.org/10.1038/s41565-023-01399-y
Autor:
Yichen Cai, Jie Shen, Jui-Han Fu, Nadeem Qaiser, Cailing Chen, Chien-Chih Tseng, Mariam Hakami, Zheng Yang, Hung-Ju Yen, Xiaochen Dong, Lain-Jong Li, Yu Han, Vincent Tung
Publikováno v:
ACS nano. 16(10)
Thin-film electronics pliably laminated onto the epidermis for noninvasive, specific, and multifunctional sensing are ideal wearable systems for health monitoring and information technologies. However, it remains a critical challenge to fabricate ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ab921b67e4a46ff734e50c5ad8a4c40
https://pubmed.ncbi.nlm.nih.gov/36125976
https://pubmed.ncbi.nlm.nih.gov/36125976
Publikováno v:
Chemistry – An Asian Journal. 16:1466-1474
In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc80e70595af6bacd024d320e6e987c9
https://doi.org/10.1002/asia.202100199
https://doi.org/10.1002/asia.202100199
Autor:
Thomas D. Anthopoulos, Wen-Hao Chang, Jui-Han Fu, Wei Ting Hsu, Vincent Tung, Dipti R Naphade, Rehab Albaridy, Lain-Jong Li, Mariam Hakami, Chen Tse-An, Jeehwan Kim, Zhen Cao, Emre Yengel, Steven Brems, Chien-Ju Lee, Chih-Piao Chuu, Chih-Chan Hsu, Areej Aljarb, Sang-Hoon Bae, Ming-Yang Li, Sergei Lopatin, Yi Wan
Publikováno v:
Nature Materials. 19:1300-1306
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da175c5bbbbbe991e3ddf69b1d9269ff
https://doi.org/10.1038/s41563-020-0795-4
https://doi.org/10.1038/s41563-020-0795-4
Autor:
Areej, Aljarb, Jui-Han, Fu, Chih-Chan, Hsu, Chih-Piao, Chuu, Yi, Wan, Mariam, Hakami, Dipti R, Naphade, Emre, Yengel, Chien-Ju, Lee, Steven, Brems, Tse-An, Chen, Ming-Yang, Li, Sang-Hoon, Bae, Wei-Ting, Hsu, Zhen, Cao, Rehab, Albaridy, Sergei, Lopatin, Wen-Hao, Chang, Thomas D, Anthopoulos, Jeehwan, Kim, Lain-Jong, Li, Vincent, Tung
Publikováno v:
Nature materials. 19(12)
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1684874fadf977df3eef31ec7c3f15c2
https://pubmed.ncbi.nlm.nih.gov/32895505
https://pubmed.ncbi.nlm.nih.gov/32895505
Autor:
Dongguen Shin, Areej Aljarb, Haiyuan Wang, Marios Zacharias, Mariam Hakami, Mariana Rossi, Matthias Meissner, Norbert Koch, Takuma Yamaguchi, Lain-Jong Li, Ruslan Ovsyannikov, Yuri Hasegawa, Dmitrii Maksimov, Soohyung Park, Satoshi Kera, Patrick Amsalem, Vincent Tung, Thorsten Schultz
Publikováno v:
Advanced Materials. 33:2170229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6a9f073df4dd48780339e1ffb1ceab7
https://doi.org/10.1002/adma.202170229
https://doi.org/10.1002/adma.202170229
Autor:
Matthias Meissner, Yuri Hasegawa, Areej Aljarb, Dongguen Shin, Takuma Yamaguchi, Marios Zacharias, Satoshi Kera, Lain-Jong Li, Haiyuan Wang, Ruslan Ovsyannikov, Mariana Rossi, Dmitrii Maksimov, Thorsten Schultz, Patrick Amsalem, Vincent Tung, Soohyung Park, Norbert Koch, Mariam Hakami
Publikováno v:
Advanced Materials
Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of states distribution of the components governs the amount of charge trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3aa0f77412e24687c411352e0a8762b
https://doi.org/10.1002/adma.202008677
https://doi.org/10.1002/adma.202008677