Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Maria-Anna Chalkiadaki"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2023)
This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- an
Externí odkaz:
https://doaj.org/article/c7b48064ddf140f9ae472fd887aa538d
Autor:
Maria-Anna Chalkiadaki, Christian Enz
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:2173-2184
The downscaling of CMOS processes has led to devices with an impressive RF performance. Advanced nanoscale RF MOSFETs present very high transit frequency, which can be traded off with lower power consumption, by shifting the operating point towards t
Publikováno v:
International Journal of Circuit Theory and Applications. 44:382-397
This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient IC. This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure
Autor:
Maria-Anna Chalkiadaki, Christian Enz
Publikováno v:
Microelectronics Journal. 45:1159-1167
Nanoscale CMOS devices display very high peak transit frequency Ft of several hundreds of GHz. This feature can be exploited for reducing power consumption by shifting the operating point towards moderate or eventually weak inversion where the Ft sti
Autor:
Yogesh Singh Chauhan, Harshit Agarwal, Christian Enz, Maria-Anna Chalkiadaki, Chenming Hu, Sourabh Khandelwal, M. A. Karim, Sriramkumar Venugopalan, Juan Pablo Duarte, Navid Paydavosi, Ali M. Niknejad
Publikováno v:
IEEE Trans. on Electron Devices
BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry
Autor:
Thierry Taris, Francois Fadhuile, Christian Enz, Maria-Anna Chalkiadaki, Yann Deval, Anurag Mangla
Publikováno v:
Microelectronics Journal. 44:570-575
The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based an
Publikováno v:
International Journal of Circuit Theory and Applications. 41:1203-1211
SUMMARY This article presents a fast and accurate way to integrate and validate Verilog-A compact models in SPICE-like simulators. Modifications in the models' Verilog-A source code may be required prior to their conversion into low-level C language
Autor:
Christian Enz, Maria-Anna Chalkiadaki
Publikováno v:
2015 Asia-Pacific Microwave Conference (APMC).
This paper discusses the concept of the inversion coefficient IC as an essential design parameter that spans the entire range of operating points, from weak, via moderate, to strong inversion. Several figures-of-merit (FoMs) including the Gm/ID, the
Publikováno v:
ESSCIRC
Autor:
Jean-Michel Sallese, Anurag Mangla, Maria-Anna Chalkiadaki, Farzan Jazaeri, W. Grabinski, Daniel Tomaszewski, Antonios Bazigos, Matthias Bucher
Publikováno v:
MIXDES
The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS