Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Maria Ronay"'
Autor:
D. Tobben, G.Y. Lee, Roy C. Iggulden, Stefan J. Weber, Maria Ronay, Jeff Gambino, Zhijian Lu, R.F. Schnabel, Clevenger Leigh Anne H, Gregory Costrini, R. Ramachandran, X.J. Ning, R. G. Filippi, Chenting Lin, David M. Dobuzinsky
Publikováno v:
Microelectronic Engineering. 50:265-270
This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is mad
Publikováno v:
Physical Review B. 45:355-360
Publikováno v:
Solid State Communications. 77:699-702
We studied the Cu 2p x-ray absorption spectra of the superconductor La2−xSrxCuO4 in the doping regime x=0-0.6 and found that the intensity of the satellite peak is a reliable measure of the doping-induced hole concentration. From the Cu 2p absorpti
Autor:
P. Nordlander, Maria Ronay
Publikováno v:
Defect and Diffusion Forum. :1097-1114
Autor:
R. G. Schad, Maria Ronay
Publikováno v:
Physical Review Letters. 64:2042-2045
Diffusion studies of Cu+Re and Re+CU films on silicon show that the formation of ${\mathrm{Cu}}_{3}$Si precursor lowers the formation temperature of ${\mathrm{ReSi}}_{2}$ from over 900 to 550 \ifmmode^\circ\else\textdegree\fi{}C. The results are expl
Autor:
Maria Ronay
Publikováno v:
Physics Today. 55:11-12
Autor:
Maria Ronay
Publikováno v:
Journal of The Electrochemical Society. 151:G847
It was shown by parallel plate rheological experiments that a second-order normal force develops between a polyurethane planarizing pad and a patterned silicon dioxide wafer upon sliding contact. Both torque and normal force increase with increasing
Autor:
Maria Ronay
Publikováno v:
Journal of The Electrochemical Society. 148:G494
The paper describes the development of an aluminum chemical mechanical planarization process that was successfully integrated into the dual damascene technology producing I Gb dynamic random access memory chips meeting all yield and sheet resistance
Autor:
Maria Ronay, C. F. Aliotta
Publikováno v:
Philosophical Magazine A. 42:161-184
Lead films varying in thickness and grain size were deposited from the vapour onto substrates varying in their coefficient of thermal expansion. This way both the yield stress of the films and the thermal stress arising from temperature change could