Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Maria Rizquez"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:539-546
The critical dimension (CD) is highly influenced by the reactive ion etching (RIE) of silicon in the CMOS technology. The CD has to be well-controlled since it is one of the most important features related to process stability and product quality. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf081567a41f166eca9b5d53d771636
https://doi.org/10.1109/tsm.2017.2758020
https://doi.org/10.1109/tsm.2017.2758020
Publikováno v:
2016 International Symposium on Semiconductor Manufacturing (ISSM).
As features sizes continue to decrease, process control has become essential to control profile and Critical Dimension (CD) uniformity across the wafer. In order to reduce the CD of the Shallow Trench Isolation (STI) process, we propose a method to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf618bd8e48dd8100d1d7c4b23c74b8
https://doi.org/10.1109/issm.2016.7934534
https://doi.org/10.1109/issm.2016.7934534
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
This paper describes the complementary study of plasma-emission wavelength by optical emission spectroscopy (OES) and the experimental results collected from an x-ray photoelectron spectroscopy (XPS) directly over the etched wafer. We have monitored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c53e640c489bf674781f340fae1b42
https://doi.org/10.1109/asmc.2014.6846967
https://doi.org/10.1109/asmc.2014.6846967