Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Maria Reiner"'
Autor:
Sylvia Titze, Sowannry Em, Sandra Kniely, Verena Gumhold, Andreas Freidl, Maria Reiner, Mario Platzer, Thomas Wernbacher
Publikováno v:
European Journal of Public Health. 32
Background Walking is an appropriate mode to increase or maintain the physical activity behavior. However, physically inactive adults often need support in order to increase their physical activity level. The aim of the presentation is to inform abou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8111780cb707c3f34fceff1d7edd47ae
https://doi.org/10.1093/eurpub/ckac095.122
https://doi.org/10.1093/eurpub/ckac095.122
Publikováno v:
Chemical Modelling ISBN: 9781839167416
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44948c67a3c5b4c1f71f5f284377cb9a
https://doi.org/10.1039/9781839169342-00178
https://doi.org/10.1039/9781839169342-00178
Autor:
Madlen Maria Reiner, Brigitta Bachmair, Maximilian Xaver Tiefenbacher, Sebastian Mai, Leticia González, Philipp Marquetand, Christoph Dellago
We present a rare event sampling scheme applicable to coupled electronic excited states. In particular, we extend the forward flux sampling (FFS) method for rare event sampling to a nonadiabatic version (NAFFS) that uses the trajectory surface hoppin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::663c8d30236051084e7ed1635b867a5f
Autor:
Madlen Maria Reiner, Brigitta Bachmair
Publikováno v:
Chemical Modelling ISBN: 9781839167416
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3658b780398c7d06682295cb83c3f358
https://doi.org/10.1039/9781839169342
https://doi.org/10.1039/9781839169342
Publikováno v:
Microelectronics Reliability. 82:62-83
Two particular defects are commonly discussed at the III-N interface: the required donor states, known to exist from the formation of the two-dimensional electron gas (2DEG) below a hetero-barrier, and defect states at the interface or within the die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a666867afc1a10d06e01c981870d08
https://doi.org/10.1016/j.microrel.2017.12.039
https://doi.org/10.1016/j.microrel.2017.12.039
Publikováno v:
physica status solidi (b). 253:2009-2014
Investigations of chemical species at the dielectric/III-N interface remain an important question in order to understand the chemical origin of the surface states, which are present at the heterostructure surface. In this work, we demonstrate a sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::043f04a70efae4a46d758cbb3100b391
https://doi.org/10.1002/pssb.201600143
https://doi.org/10.1002/pssb.201600143
Autor:
Johannes Glaab, Sven Einfeldt, Jan Ruschel, Sylvia Hagedorn, Arne Knauer, Christoph Stoelmacker, Michael Kneissl, Ina Ostermay, Katrin Hilbrich, Tim Kolbe, O. Krueger, Anna Andrle, Deepak Prasai, Maria Reiner, A. Thies, S. Knigge, Markus Weyers, Jens Rass, Neysha Lobo Ploch, Hyun Kyong Cho
Publikováno v:
Gallium Nitride Materials and Devices XIII.
The development of efficient (In)AlGaN light emitting diodes (LEDs) in the ultraviolet B (UVB) spectral region (280nm-320nm) is essential due to their vast commercial potential. UVB LEDs are expected to not only replace traditional mercury lamps in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fed9a63ae1fdc87fab57ae64da2b7d5
https://doi.org/10.1117/12.2287131
https://doi.org/10.1117/12.2287131
Publikováno v:
ACS Applied Materials & Interfaces. 7:23124-23131
The influence of surface modifications on the Schottky barrier height for gallium nitride semiconductor devices is frequently underestimated or neglected in investigations thereof. We show that a strong dependency of Schottky barrier heights for nick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e21989d03eacefc67481d98b7a2825d8
https://doi.org/10.1021/acsami.5b06918
https://doi.org/10.1021/acsami.5b06918
Autor:
Marcus Reiss, Clemens Ostermaier, Lauri Knuuttila, Rudolf Pietschnig, Thorge Brünig, Maria Reiner
Publikováno v:
physica status solidi (b). 252:1121-1126
The etch mechanism of group-III-nitrides in hot H3PO4 has been studied and compared to KOH. The etched surfaces were investigated by AFM, SEM, TEM, EDX and the etch solutions by NMR. AlGaN is shown to be selectively etched by low temperature H3PO4 or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::546ba38cd33def09d1a5711bab190495
https://doi.org/10.1002/pssb.201451504
https://doi.org/10.1002/pssb.201451504
Publikováno v:
IEEE Transactions on Electron Devices. 61:1022-1030
The transient recovery characteristics of the threshold voltage drift (ΔVth) of GaN-based HEMTs with a SiO2 gate dielectric induced by forward gate bias stress are systematically and comprehensively investigated for stress times from 100 ns to 10 ks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::964a7b2eb83e59a80e295f4260dfe4a4
https://doi.org/10.1109/ted.2014.2303853
https://doi.org/10.1109/ted.2014.2303853