Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Maria J. Calderon"'
Publikováno v:
Condensed Matter
Volume 6
Issue 3
Condensed Matter, Vol 6, Iss 34, p 34 (2021)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Volume 6
Issue 3
Condensed Matter, Vol 6, Iss 34, p 34 (2021)
Digital.CSIC. Repositorio Institucional del CSIC
instname
[EN] We analyze the magnetic excitations and the spin-mediated superconductivity in iron-based superconductors within a low energy model that operates in the band basis, but fully incorporates the orbital character of the spin excitations. We show ho
Autor:
Maria J. Calderon, Elena Bascones
Publikováno v:
Physical Review B. 102
We calculate the interactions between the Wannier functions of the 8-orbital model for twisted bilayer graphene (TBG). In this model, two orbitals per valley centered at the AA regions, the AA-p orbitals, account for the most part of the spectral wei
Autor:
Maria J. Calderon, Elena Bascones
Publikováno v:
npj Quantum Materials, Vol 5, Iss 1, Pp 1-6 (2020)
Moir\'e systems displaying flat bands have emerged as novel platforms to study correlated electron phenomena. Insulating and superconducting states appear upon doping magic angle twisted bilayer graphene (TBG), and there is evidence of correlation in
Autor:
Belita Koiller, Maria J. Calderon, Susan Coppersmith, Andre Saraiva, Cameron King, Mark Friesen, Hong-Wen Jiang, Joshua S. Schoenfield, Xuedong Hu
Publikováno v:
Physical Review B. 101
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoret
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2668-2673 (2018)
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2668-2673 (2018)
Since the proposal in 1998 to build a quantum computer using dopants in silicon as qubits, much progress has been made in the nanofabrication of semiconductors and the control of charge and spins in single dopants. However, an important problem remai
Autor:
Imtiaz Ahmed, L. Bourdet, David J. Ibberson, S. Barraud, J. C. Abadillo-Uriel, Maria J. Calderon, M. F. Gonzalez-Zalba, Yann-Michel Niquet
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2018, 113 (5), pp.053104. ⟨10.1063/1.5040474⟩
Ibberson, D J, Bourdet, L, Abadillo-Uriel, J C, Ahmed, I, Barraud, S, Calderón, M J, Niquet, Y M & Gonzalez-Zalba, M F 2018, ' Electric-field tuning of the valley splitting in silicon corner dots ', Applied Physics Letters, vol. 113, no. 5, 053104 . https://doi.org/10.1063/1.5040474
Applied Physics Letters, American Institute of Physics, 2018, 113 (5), pp.053104. ⟨10.1063/1.5040474⟩
Applied Physics Letters, 2018, 113 (5), pp.053104. ⟨10.1063/1.5040474⟩
Ibberson, D J, Bourdet, L, Abadillo-Uriel, J C, Ahmed, I, Barraud, S, Calderón, M J, Niquet, Y M & Gonzalez-Zalba, M F 2018, ' Electric-field tuning of the valley splitting in silicon corner dots ', Applied Physics Letters, vol. 113, no. 5, 053104 . https://doi.org/10.1063/1.5040474
Applied Physics Letters, American Institute of Physics, 2018, 113 (5), pp.053104. ⟨10.1063/1.5040474⟩
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b76530ea44bb2ada51199f2b72868f04
https://hal.science/hal-02141916
https://hal.science/hal-02141916
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the commensurability at which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62ef5ea3869746a1148dfc17a5b8dc67
http://arxiv.org/abs/1805.07303
http://arxiv.org/abs/1805.07303
Autor:
Dohun Kim, Ryan H. Foote, Maria J. Calderon, Susan Coppersmith, C. B. Simmons, Mark Friesen, Max G. Lagally, Brandur Thorgrimsson, Mark A. Eriksson, J. C. Abadillo-Uriel, L. W. Smith, D. R. Ward, J. Corrigan, Donald E. Savage
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab5231080d18957a5f0b2e78f98923e9
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
The large spin-orbit coupling in the valence band of group IV semiconductors provides an electric field knob for spin-qubit manipulation. This fact can be exploited with acceptor based qubits. Spin manipulation of holes bound to acceptors in engineer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e660183c55bc0b00e240d0547d443b16
http://arxiv.org/abs/1702.00960
http://arxiv.org/abs/1702.00960
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Undoped iron superconductors accommodate n=6 electrons in five d orbitals. Experimental and theoretical evidence shows that the strength of correlations increases with hole doping, as the electronic filling approaches half filling with n=5 electrons.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a482cc7c6a56b17d0e61f942cfaa6f1
http://hdl.handle.net/10261/189258
http://hdl.handle.net/10261/189258