Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Maria F. Ebel"'
Autor:
Wolfgang Kern, Ute Daschiel, Maria F. Ebel, Hartmuth Schröttner, Robert Svagera, Julia Spanring
Publikováno v:
Macromolecular Chemistry and Physics. 209:1232-1239
The photoassisted modification of LDPE by VUV irradiation in a reactive trimethylsilane/ oxygen atmosphere was investigated. The modified LDPE surface was investigated by FT-IR, XPS, contact-angle measurements and electron microscopy. Attachment of a
Publikováno v:
Macromolecular Chemistry and Physics. 208:1159-1167
A new method for the modification of polymer surfaces with phosphorus-containing groups is described. Films of polybutadiene were UV-irradiated in the presence of PBr 3 vapor as a photoreactive agent. After subsequent reaction with water under aerobi
Publikováno v:
Polymer. 47:156-165
A photochemical process for the modification of polymer surfaces using organosilane compounds has been developed. The process is based upon the UV irradiation of polybutadiene in the presence of liquid ethyldimethylsilane (C 2 H 5 )(CH 3 ) 2 Si–H a
Publikováno v:
Macromolecular Chemistry and Physics. 206:2248-2256
A process for the photochemical modification of polystyrene (PS) surfaces employing organosilane compounds has been developed. Polystyrene was irradiated in presence of trialkylsilanes [ethyldimethylsilane (EDMS), trimethylsilane (TrMS)]. UV irradiat
Autor:
Cees van der Marel, Maria F. Ebel, Robert Svagera, Reza Ashury, Horst Ebel, Peter Cornelis Zalm
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :145-151
Theoretical considerations of X-ray fluorescence analysis show that secondary excitation of characteristic radiations can contribute up to 30% to measured signals. A similar theoretical approach describes the generation of X-ray photoelectron spectra
Publikováno v:
X-Ray Spectrometry. 32:442-451
After a systematic analysis of different databases and a comparison with empirical data, we decided to describe photoelectric absorption coefficients, coherent and incoherent scattering coefficients and mass attenuation coefficients in the energy ran
Publikováno v:
X-Ray Spectrometry. 31:437-440
Thin layers of AlxGa1 − xAs on GaAs substrates are characterized by thickness t and composition x. Measuring the GaK total electron yield (TEY) jumps delivers either x for known t or vice versa. A result of this investigation is the possibility of
Publikováno v:
X-Ray Spectrometry. 30:180-185
Hayashi et al. published a paper on refracted X-rays propagating near the surface under grazing incidence conditions. For pure silicon wafers the refraction can be described by Snell's law, whereas for thin n-C 33 H 86 layers on silicon wafers an add
Publikováno v:
X-Ray Spectrometry. 30:139-142
The influence of the neglect of multiple ionizations in quantitative XRF without standards is demonstrated by computer simulation and evaluation of characteristic X-ray signals of binary bulk specimens of Al and Cu. An error of up to 4 wt% can be exp
Autor:
Jürgen Kattner, Ulrich Mayer, Maria F. Ebel, Thomas Vallant, Thomas Leitner, Gernot Friedbacher, G. Schügerl, H. Brunner, Helmuth Hoffmann, Robert Svagera
Publikováno v:
The Journal of Physical Chemistry B. 104:5309-5317
Ultrathin SiO2 films with thicknesses between 0.3 and 8 nm were grown on native silicon (Si/SiO2), muscovite mica and polycrystalline gold substrates via repeated application of a binary reaction s...