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pro vyhledávání: '"Maria A. Darling"'
Publikováno v:
Materials Chemistry and Physics. 89:345-353
Ag may eventually replace Cu (like Cu has replaced Al) in sub-micron interconnects used for integrated circuits. Fabrication of such Ag lines would typically involve damascene structures patterned by chemical–mechanical planarization (CMP). Our pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cc61b53531751ee37640213338be3b
https://doi.org/10.1016/j.matchemphys.2004.09.011
https://doi.org/10.1016/j.matchemphys.2004.09.011
