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Autor:
Kazuo Mizuguchi, Yuji Ohkura, Mari Tsugami, A. Takemoto, T. Murotani, N. Yoshida, Tadashi Kimura
Publikováno v:
International Technical Digest on Electron Devices Meeting.
1.55- mu m band InGaAs-InGaAsP multiple-quantum-well distributed feedback laser diodes have been successfully fabricated by metalorganic chemical vapor deposition. The threshold current is as low as 9 mA, and the slope efficiency is 0.2 mW/mA. A very