Zobrazeno 1 - 10
of 443
pro vyhledávání: '"Margit, Zacharias"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-12 (2022)
Abstract The effect of an externally applied electric field on exciton splitting and carrier transport was studied on 3.5 nm Si nanocrystals embedded in SiO2 superlattices with barrier oxide thicknesses varied between 2 and 4 nm. Through a series of
Externí odkaz:
https://doaj.org/article/34a60a4e62d34e96b85cca81669ca16a
Autor:
Jasmin-Clara Bürger, Serin Lee, Aubrey Penn, Sebastian Gutsch, Maximilian Kolhep, Jan Büttner, Anna Fischer, Frances M. Ross, Margit Zacharias
Publikováno v:
Advanced Energy & Sustainability Research, Vol 3, Iss 11, Pp n/a-n/a (2022)
Full utilization of the high storage capacity of conversion electrode materials as tin oxide (SnO2) in lithium‐ion batteries is hindered by the high volumetric expansion due to the high lithium storability which can lead to major cell damage and co
Externí odkaz:
https://doaj.org/article/02ef6e4fbcd646ebbea1d0e8b447e912
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 843-853 (2020)
In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced proces
Externí odkaz:
https://doaj.org/article/d5caf6ebdad04553bdfa7a3ed2935227
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125315-125315-5 (2020)
We report on the quantum confined Stark effect coupled with a permanent built-in electric dipole moment in size-controlled Si nanocrystals (SiNCs) investigated under steady state conditions by photoluminescence spectroscopy. The study was conducted o
Externí odkaz:
https://doaj.org/article/3c6fb4e165fe4aaba15e81dd572b1a30
Autor:
Daniel Hiller, Julian López-Vidrier, Keita Nomoto, Michael Wahl, Wolfgang Bock, Tomáš Chlouba, František Trojánek, Sebastian Gutsch, Margit Zacharias, Dirk König, Petr Malý, Michael Kopnarski
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1501-1511 (2018)
Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to t
Externí odkaz:
https://doaj.org/article/3a00241b85f74d19a10444fca60bd633
Autor:
Michael Greben, Petro Khoroshyy, Sebastian Gutsch, Daniel Hiller, Margit Zacharias, Jan Valenta
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 2315-2323 (2017)
The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of e
Externí odkaz:
https://doaj.org/article/59fc35e59a4a4c2eb17480d7ebc4a48a
Autor:
Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Michael Wahl, Wolfgang Bock, Alexander Brodyanski, Michael Kopnarski, Keita Nomoto, Jan Valenta, Dirk König
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photo
Externí odkaz:
https://doaj.org/article/aa3a48c9bf124fddb07cb48c20ef97e0
Autor:
Daniel Hiller, Julian López-Vidrier, Sebastian Gutsch, Margit Zacharias, Keita Nomoto, Dirk König
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Abstract Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical
Externí odkaz:
https://doaj.org/article/ad8bc64d60524ad39a69746d9678625a
Autor:
Jasmin-Clara Bürger, Sebastian Gutsch, Vanessa Wollersen, Di Wang, Björn Christian, Zhe Fu, Oliver Ambacher, Christian Kübel, Margit Zacharias
Publikováno v:
The Journal of Physical Chemistry C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb0d7ba7e18a61e5febceae56d06601
https://doi.org/10.1021/acs.jpcc.3c02405
https://doi.org/10.1021/acs.jpcc.3c02405
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 964-970 (2015)
We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich
Externí odkaz:
https://doaj.org/article/1dc8e9023a294790bffc2d6d23445f22