Zobrazeno 1 - 10
of 445
pro vyhledávání: '"Margetis, J."'
Autor:
Kondratenko, S.V., Hyrka, Yu.V., Mazur, Yu.I., Kuchuk, A.V., Dou, W., Tran, H., Margetis, J., Tolle, J., Yu, S.-Q., Salamo, G.J.
Publikováno v:
In Acta Materialia 1 June 2019 171:40-47
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Autor:
Margetis, J., Mosleh, A., Al-Kabi, S., Ghetmiri, S.A., Du, W., Dou, W., Benamara, M., Li, B., Mortazavi, M., Naseem, H.A., Yu, S.-Q., Tolle, J.
Publikováno v:
In Journal of Crystal Growth 1 April 2017 463:128-133
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Autor:
Olorunsola O; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Ojo S; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Material Science and Engineering Program, University of Arkansas, Fayetteville, AR 72701, United States of America., Abernathy G; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Zhou Y; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Amoah S; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Grant PC; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Dou W; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Margetis J; School of Electrical, Energy and Computer Engineering, Arizona State University, Phoenix AZ 85034, United States of America., Tolle J; School of Electrical, Energy and Computer Engineering, Arizona State University, Phoenix AZ 85034, United States of America., Kuchuk A; Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Du W; Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, United States of America., Li B; Arktonics LLC, 1339 S. Pinnacle Dr, Fayetteville, AR 72701, United States of America., Zhang YH; School of Electrical, Energy and Computer Engineering, Arizona State University, Phoenix AZ 85034, United States of America., Yu SQ; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America.; Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America.
Publikováno v:
Nanotechnology [Nanotechnology] 2021 Nov 30; Vol. 33 (8). Date of Electronic Publication: 2021 Nov 30.
Akademický článek
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Autor:
Eales TD; Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, United Kingdom., Marko IP; Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, United Kingdom., Schulz S; Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland., O'Halloran E; Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland.; School of Chemistry, University College Cork, Cork, T12 YN60, Ireland., Ghetmiri S; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA., Du W; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.; Department of Electrical Engineering, Wilkes University, Wilkes-Barre, PA, 18766, USA., Zhou Y; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA., Yu SQ; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA., Margetis J; ASM, 3440 East University Drive, Phoenix, Arizona, 85034, USA., Tolle J; ASM, 3440 East University Drive, Phoenix, Arizona, 85034, USA., O'Reilly EP; Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland.; Department of Physics, University College Cork, Cork, T12 YN60, Ireland., Sweeney SJ; Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, United Kingdom. s.sweeney@surrey.ac.uk.
Publikováno v:
Scientific reports [Sci Rep] 2019 Oct 01; Vol. 9 (1), pp. 14077. Date of Electronic Publication: 2019 Oct 01.
Akademický článek
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Akademický článek
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Autor:
Corley-Wiciak C; European Synchrotron Radiation Facility, 71 avenue des Martyrs, CS 40220, Grenoble Cedex 9, 38043, France., Zoellner MH; Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt(Oder), Germany., Corley-Wiciak AA; Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt(Oder), Germany.; RWTH Aachen, 52062, Aachen, Germany., Rovaris F; L-NESS and Department of Materials Science, University of Milano-Bicocca, Via Roberto Cozzi 55, 20125, Milano, Italy., Zatterin E; European Synchrotron Radiation Facility, 71 avenue des Martyrs, CS 40220, Grenoble Cedex 9, 38043, France., Zaitsev I; Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt(Oder), Germany., Sfuncia G; CNR-IMM, Zona Industriale Strada VIII,5, Catania, 95121, Italy., Nicotra G; CNR-IMM, Zona Industriale Strada VIII,5, Catania, 95121, Italy., Spirito D; Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt(Oder), Germany., von den Driesch N; Peter Grünberg Institute 10 (PGI 10) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52425, Jülich, Germany., Manganelli CL; Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt(Oder), Germany., Marzegalli A; L-NESS and Department of Materials Science, University of Milano-Bicocca, Via Roberto Cozzi 55, 20125, Milano, Italy., Schulli TU; European Synchrotron Radiation Facility, 71 avenue des Martyrs, CS 40220, Grenoble Cedex 9, 38043, France., Buca D; Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52425, Jülich, Germany., Montalenti F; L-NESS and Department of Materials Science, University of Milano-Bicocca, Via Roberto Cozzi 55, 20125, Milano, Italy., Capellini G; Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt(Oder), Germany.; Dipartimento di Scienze, Universita Roma Tre, Roma, 00146, Italy., Richter C; IKZ - Leibniz -Institut für Kristallzüchtung, Max-Born-Straße 2, 12489, Berlin, Germany.
Publikováno v:
Small methods [Small Methods] 2024 Jul 29, pp. e2400598. Date of Electronic Publication: 2024 Jul 29.