Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Margareta Linnarsson"'
Autor:
Marianne Etzelmüller Bathen, Margareta Linnarsson, Misagh Ghezellou, Jawad Ul Hassan, Lasse Vines
Publikováno v:
Crystals, Vol 10, Iss 9, p 752 (2020)
Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) 4H-SiC substrate, and finally
Externí odkaz:
https://doaj.org/article/458e828a8e6049caa6c3b80f7f998209
Autor:
J Jianwu Sun, Iñigo Ramiro, I Ian Booker, Ejm Emiel Hensen, Lu Gao, Peter J. Wellmann, Mattias Jansson, Rositsa Yakimova, Jan P. Hofmann, M Margareta Linnarsson, Valdas Jokubavicius, Mikael Syväjärvi, X Xinyu Liu, Antonio Martí
Publikováno v:
Materials Science Forum, ISSN 1662-9752, 2016-05, Vol. 858
Archivo Digital UPM
Universidad Politécnica de Madrid
Materials Science Forum, 858, 1028-1031
Archivo Digital UPM
Universidad Politécnica de Madrid
Materials Science Forum, 858, 1028-1031
There is a strong and growing worldwide research on exploring renewable energy resources. Solar energy is the most abundant, inexhaustible and clean energy source, but there are profound material challenges to capture, convert and store solar energy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d848ad32824a67547cb870ebe91ab3fa
https://research.tue.nl/en/publications/1301610f-8094-4c07-ab04-925d3722ce6a
https://research.tue.nl/en/publications/1301610f-8094-4c07-ab04-925d3722ce6a
Autor:
Margareta Linnarsson, Jacob Fage-Pedersen, John Lundsgaard Hansen, Arne Nylandsted Larsen, Peter I. Gaiduk
Publikováno v:
Physical Review Letters. 81:5856-5859
The diffusion of Sb in Si has been studied as a function of Sn-background concentration, and enhanced Sb diffusion is observed for backgrounds higher than CSn1 = 5 A— 1019 cm-3. This concentration for the onset of enhanced diffusion is significantl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a4eeffda786ce06f7fa369c744e6c7
https://doi.org/10.1103/physrevlett.81.5856
https://doi.org/10.1103/physrevlett.81.5856
Autor:
Vytautas Grivickas, Karolis Gulbinas, Valdas Jokubavičius, Jian Wu Sun, Yiyu Ou, Haiyan Ou, Margareta Linnarsson, Mikael Syväjärvi, Satoshi Kamiyama
Publikováno v:
Grivickas, V, Gulbinas, K, Jokubavičius, V, Sun, J W, Ou, Y, Ou, H, Linnarsson, M, Syväjärvi, M & Kamiyama, S 2011, ' Carrier Lifetimes in Fluorescent 6H-SiC for LEDs Application ', Lithuanian National Physics Conference, Vilnius, Lithuania, 01/01/2011 .
Technical University of Denmark Orbit
Technical University of Denmark Orbit
Recently it was shown a new approach based on all-semiconductor material technology which is composed with a near ultra-violet GaN LED excitation source and fluorescent silicon carbide (f-6H-SiC) substrate which generates a visible broad spectral lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3b85efe284db6885cee8137bfe4bb652
https://orbit.dtu.dk/en/publications/be1ef225-1029-4ab8-b83d-3c2fa6a42c97
https://orbit.dtu.dk/en/publications/be1ef225-1029-4ab8-b83d-3c2fa6a42c97
Autor:
Mikael Syvaejaervi, Jianwu Sun, Peter Wellmann, Valdas Jokubavicius, Saskia Schimmel, Philip Hens, Rickard Liljedahl, Rositza Yakimova, Michl Kaiser, Martin Wilhelm, Margareta Linnarsson, Yiyu Ou, Haiyan Ou
Publikováno v:
Technical University of Denmark Orbit
Syvaejaervi, M, Sun, J, Wellmann, P, Jokubavicius, V, Schimmel, S, Hens, P, Liljedahl, R, Yakimova, R, Kaiser, M, Wilhelm, M, Linnarsson, M, Ou, Y & Ou, H 2012, ' Fluorescent SiC as a New Platform for Visible and Infrared Emitting Applications as Well as Prospective Photovoltaics ', 2012 MRS Fall Meeting & Exhibit, Boston, MA, United States, 25/11/2012-30/11/2012 .
Syvaejaervi, M, Sun, J, Wellmann, P, Jokubavicius, V, Schimmel, S, Hens, P, Liljedahl, R, Yakimova, R, Kaiser, M, Wilhelm, M, Linnarsson, M, Ou, Y & Ou, H 2012, ' Fluorescent SiC as a New Platform for Visible and Infrared Emitting Applications as Well as Prospective Photovoltaics ', 2012 MRS Fall Meeting & Exhibit, Boston, MA, United States, 25/11/2012-30/11/2012 .
Fluorescent SiC is a novel materials system which may be a new platform for visible and infrared emitting applications. Although SiC is an indirect bandgap semiconductor, the donor acceptor pair emissions involving deep acceptors could become efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f60d5e859fd7d0fe3ae535406edbbd7f
https://orbit.dtu.dk/en/publications/88f34066-75af-4266-9381-3c546e74fb51
https://orbit.dtu.dk/en/publications/88f34066-75af-4266-9381-3c546e74fb51
Publikováno v:
Japanese Journal of Applied Physics; Jun2014, Vol. 53 Issue 6, p1-1, 1p