Zobrazeno 1 - 10
of 275
pro vyhledávání: '"Margaret Buchanan"'
Autor:
Pippa Kay, German Spangenberg, Steven R. Webb, John Mason, Yidong Ran, Matthew J. Hayden, John P. Davies, Nicola J. Patron, Margaret Buchanan, Tim Sawbridge, Terence A. Walsh, Ying-Ying Cao, Debbie Wong, William Michael Ainley
Publikováno v:
Plant Biotechnology Journal
Summary Sequence‐specific nucleases have been used to engineer targeted genome modifications in various plants. While targeted gene knockouts resulting in loss of function have been reported with relatively high rates of success, targeted gene edit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b464dcb56917610c4587a727ac9993da
This thesis argues that a theological articulation of panpsychism, within the bounds of a broadly conceived Christian orthodoxy, would be of benefit to the doctrine of creation. Panpsychism is a family of theories within philosophy of mind, which see
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______463::321380c008b99d58768ad0c754461ab6
http://hdl.handle.net/1842/35950
http://hdl.handle.net/1842/35950
Autor:
Z. R. Wasilewski, S. Haffouz, Margaret Buchanan, H. C. Liu, R. Dudek, Sean Hinds, S. R. Laframboise
Publikováno v:
Advanced Materials. 23:5536-5539
We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large are
Autor:
A. G. U. Perera, Margaret Buchanan, D. P. Pitigala, Z. R. Wasilewski, H. C. Liu, Edmund H. Linfield, Yan-Feng Lao, Suraj P. Khanna, X. H. Wu, Lianhe Li, S. G. Matsik
Publikováno v:
Infrared Physics & Technology. 54:296-301
Increasing the operating temperature of infrared detectors is a prime importance for practical applications. The use of split-off band transitions has been proposed for high operating temperature infrared detectors. Initial results showed increasing
Autor:
H. C. Liu, Margaret Buchanan, P.V.V. Jayaweera, S. G. Matsik, Manmohan Singh Shishodia, A. G. U. Perera
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 9:95-100
Metal corrugated surfaces have the potential of enhancing optical absorption through surface plasmon (SP) excitation facilitated by light-metal interactions. The successful utilization of metal corrugation induced optical absorption can improve the r
Autor:
Margaret Buchanan, H. C. Liu, Z. R. Wasilewski, A. G. Unil Perera, S. G. Matsik, P.V.V. Jayaweera, Yan-Feng Lao
Publikováno v:
IEEE Transactions on Electron Devices. 57:1230-1236
An analysis of dark current mechanisms has been performed on high-operating-temperature (up to 330 K) split-off (SO) band p+-GaAs/AlGaAs heterojunction infrared detectors (3-5 μm). In contrast to conventional 1-D current models due to carrier transp
Autor:
Z. R. Wasilewski, A. G. U. Perera, Margaret Buchanan, H. C. Liu, Vadym Apalkov, G. Ariyawansa
Publikováno v:
IEEE Journal of Quantum Electronics. 46:877-883
We study experimentally and numerically the polarization sensitivity of quantum well infrared photodetectors coupled to a diffraction grid. The polarization extinction ratio of such system is determined by two factors: polarization sensitivity of the
Publikováno v:
Infrared Physics & Technology. 52:285-288
Quantum-wells and quantum dots and related semiconductor nanostructures have been widely investigated for infrared devices. Here we propose a new general approach to make use of polar optical phonons in quantum-wells for infrared (IR) and terahertz (
Autor:
P.V.V. Jayaweera, H. C. Liu, Margaret Buchanan, Z. R. Wasilewski, A. G. U. Perera, S. G. Matsik
Publikováno v:
Infrared Physics & Technology. 52:241-246
A GaAs/AlGaAs heterojunction is used as a spin-split-off band IR detector operating at or around room temperature. This detector structure followed a similar layer architecture to the quantum well IR photo detectors (QWIP) and Heterojunction Interfac
Publikováno v:
IEEE Journal of Quantum Electronics. 45:623-628
We present a systematic study on a set of n-type GaAs-AlGaAs quantum-well infrared photodetectors (QWIPs) with varying Si doping density in the wells. It is revealed that the increase in doping density enhances proportionally the absorption efficienc