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pro vyhledávání: '"Maremyanin, K. M."'
Autor:
Yermolayev, D. M., Maremyanin, K. M., Fateev, D. V., Morozov, S. V., Maleev, N. A., Zemlyakov, V. E., Gavrilenko, V. I., Shapoval, S. Yu., Popov, V. V.
We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The fr
Externí odkaz:
http://arxiv.org/abs/1110.1797
