Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Marek Wzorek"'
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055315-055315-9 (2020)
Effects of aluminum (Al) and nitrogen (N) implantation performed at room and at elevated (500 °C) temperatures on epitaxial n-type 4H polytype silicon carbide as well as post-implantation annealing have been studied by Raman scattering spectroscopy.
Externí odkaz:
https://doaj.org/article/8770e43d11fe47ff9116d65f2f1ce105
Publikováno v:
Sensors, Vol 22, Iss 1, p 287 (2021)
The focused ion beam (FIB) technique was used to fabricate a nanothermocouple (with a 90 nm wide nanojunction) based on a metal–semiconductor (Pt–Si) structure, which showed a sensitivity up to 10 times larger (with Seebeck coefficient up to 140
Externí odkaz:
https://doaj.org/article/f08fb51ab0fb41b8b707e6b07db71cb5
A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping
Autor:
Iwona Sankowska, Agata Jasik, Krzysztof Czuba, Jacek Ratajczak, Paweł Kozłowski, Marek Wzorek
Publikováno v:
Materials, Vol 14, Iss 17, p 4940 (2021)
In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200
Externí odkaz:
https://doaj.org/article/b84e2369266440df87516b4c66ae9c14
Autor:
Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek
Publikováno v:
Micromachines, Vol 9, Iss 11, p 546 (2018)
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobilit
Externí odkaz:
https://doaj.org/article/3b8d577d5d7240e7ba84e212384c9c80
Publikováno v:
Sensors, Vol 22, Iss 287, p 287 (2022)
Sensors (Basel, Switzerland)
Sensors (Basel, Switzerland)
The focused ion beam (FIB) technique was used to fabricate a nanothermocouple (with a 90 nm wide nanojunction) based on a metal–semiconductor (Pt–Si) structure, which showed a sensitivity up to 10 times larger (with Seebeck coefficient up to 140
Autor:
Piotr Guzdek, Marek Wzorek
Publikováno v:
Microelectronics International, 2015, Vol. 32, Issue 3, pp. 110-114.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/MI-01-2015-0012
Autor:
Marek Wzorek, Julita Smalc-Koziorowska, Agata Bojarska-Cieslinska, Szymon Grzanka, Dario Schiavon, Piotr Perlin, Tomasz Czyszanowski, Andrzej Czerwiński, Lucja Marona, P. Wisniewski, Szymon Stanczyk
Publikováno v:
ACS Applied Materials & Interfaces. 12:52089-52094
We studied degradation mechanisms of ultraviolet InGaN laser diodes emitting in the UVA range. Short wavelength nitride devices are subjected to much faster degradation, under the same packaging and testing conditions, than their longer wavelength co
Autor:
Andrzej Taube, Michał A. Borysiewicz, Oskar Sadowski, Aleksandra Wójcicka, Jarosław Tarenko, Krzysztof Piskorski, Marek Wzorek
Publikováno v:
Materials Science in Semiconductor Processing. 154:107218
Publikováno v:
Nanotechnology.
We fabricate porous nanostructured 1μm thick ZnO-metal/metal oxide hybrid material thin films using a unique approach utilizing physical vapor deposition with postdeposition annealing. We study Pt, Pd, Ru, Ir and Sn as the metals and find they all f
Autor:
Adrianna Wójcik, Aleksandra K. Dąbrowska, Sylwia Kozdra, Johannes Binder, Włodzimierz Strupiński, Roman Stępniewski, Andrzej Wysmołek, Tomasz Strachowski, Marek Wzorek, Agnieszka Malinowska, Edyta Wierzbicka, Ryszard Diduszko, Paweł P. Michałowski
Publikováno v:
Scripta Materialia. 220:114943