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pro vyhledávání: '"Marek Osinskif"'
Autor:
Mike Lioubtchenko, Matthew Schurmant, Qisheng Chen, H. Paul Maruska, Thomas G. Tetreault, Shiro Sakap, Robert Vaudo, Marek Osinskif, Randy J. Shult, Stephen J. Pearton
Publikováno v:
Scopus-Elsevier
With great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation int