Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Marcus Weyers"'
Autor:
Bernd Sumpf, Frank Bugge, Gunnar Blume, Nils Werner, David Feise, Roland Bege, Marcus Weyers, Katrin Paschke, Ute Zeimer
Publikováno v:
Journal of Crystal Growth. 491:31-35
Highly strained InxGa1−xAs QWs are commonly used for laser diodes in the wavelength range beyond 1100 nm, but they suffer from strain induced formation of defects. The effect of different laser structures and different laser layouts on the aging be
Publikováno v:
Journal of Crystal Growth. 483:297-300
The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al 0.7 Ga 0.3 N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/
Publikováno v:
Journal of Crystal Growth. 452:253-257
This report describes in-situ measurements of multi-wavelength reflectance, wafer curvature and growth temperature during epitaxy of semi-polar (11–22)-GaN on 100 mm diameter r -plane PSS. Reflectance transients at 405 nm can be correlated with the
Autor:
Arne Knauer, Christian Kuhn, Marcus Weyers, M. D. Smith, Benjamin Hourahine, S. Hagedorn, M. Nouf-Allehiani, G. Naresh-Kumar, Elena Pascal, David M. Thomson, Peter J. Parbrook, Y. Gong, Sebastian Walde, A Kotzai, S. Kraeusel, R. M. Smith, W. Avis, Tim Wernicke, Gunnar Kusch, Robert W. Martin, Tao Wang, L. Jiu, Aimo Winkelmann, Johannes Enslin, R. McDermott, A. Alasmari, Yonghao Zhang, Frank Mehnke, Michael Kneissl, Jochen Bruckbauer, Jie Bai, Paul R. Edwards, Philip A. Shields, Gergely Ferenczi, S. Vespucci, P. M. Coulon, Carol Trager-Cowan
Publikováno v:
Semiconductor Science and Technology. 35:054001
The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and cathodoluminescence (CL) hyperspectral imaging provide complementary information on the structural and luminescen
Autor:
M. Nouf-Allehiani, S. Vespucci, R. M. Smith, A. Alasmari, Y. Gong, Yonghao Zhang, W. Avis, Carol Trager-Cowan, Frank Mehnke, Tim Wernicke, Tao Wang, David M. Thomson, Aimo Winkelmann, L. Jiu, Philip A. Shields, M. D. Smith, Benjamin Hourahine, Gunnar Kusch, V. Kueller, Christian Kuhn, Robert W. Martin, Lucia Spasevski, Johannes Enslin, S. Hagedorn, G. Naresh-Kumar, Paul R. Edwards, Sebastian Walde, S. Kraeusel, Michael Kneissl, Marcus Weyers, Roy L. Johnston, Peter J. Parbrook, Jochen Bruckbauer, Pierre-Marie Coulon, Elena Pascal, Arne Knauer
Publikováno v:
Photonics Research
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our r
Publikováno v:
SPIE Proceedings.
Solar blind Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors (MSM PDs) are characterized by means of photocurrent spectroscopy. In order to enhance the external quantum efficiency (EQE) at low bias voltages several strategies have been adopte
Autor:
Sven Einfeldt, Marcus Weyers, Ute Zeimer, Moritz Brendel, V. Kueller, Arne Knauer, Frank Brunner, Andrea Knigge
Publikováno v:
physica status solidi c. 11:802-805
Solar-blind Schottky-type metal-semiconductor-metal (MSM) photodetectors (PDs) based on AlxGa1–xN absorber layers with x varying between 0.4 and 1 are investigated. The impact of the epitaxial lateral overgrowth (ELO) technique on stripe patterned
Publikováno v:
physica status solidi c. 11:377-380
The crystalline perfection of AlxGa1-xN layers with Al content of x ∼ 0.5 on epitaxial laterally overgrown (ELO) AlN with low defect density was investigated by spatially and spectrally resolved cathodoluminescence, scanning electron and atomic for
Autor:
Andrea Knigge, Marcus Weyers, Andre Maaßdorf, T. Adam, P. Della Casa, A. Thies, K. Häusler, Dominik Martin, M Beier
Publikováno v:
Semiconductor Science and Technology. 34:105005
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCC21
The degradation of AlGaN-based metal-semiconductor-metal photodetectors under UV illumination has been studied. Oxidation triggered by the presence of moisture and mobile carriers at the semiconductor surface was found to be the degradation mechanism