Výsledky vyhledávání - "Marcus Lippold"

HF-(NH4)2S2O8-HCl Mixtures for HNO3- and NOx-free Etching of Diamond Wire- and SiC-Slurry-Sawn Silicon Wafers: Reactivity Studies, Surface Chemistry, and Unexpected Pyramidal Surface Morphologies

Autor: André Stapf, Edwin Kroke, Christoph Gondek, Marcus Lippold

Publikováno v: ACS Applied Materials & Interfaces. 7:8733-8742

The wet-chemical treatment of silicon wafers is an important production step in photovoltaic and semiconductor industries. Solutions containing hydrofluoric acid, ammonium peroxodisulfate, and hydrochloric acid were investigated as novel acidic, NOx-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a5cad9de7e7c82a56c7744779452f2f
https://doi.org/10.1021/acsami.5b01059

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Texturing of SiC-slurry and diamond wire sawn silicon wafers by HF–HNO3–H2SO4 mixtures

Autor: Florian Buchholz, Edwin Kroke, Florian Honeit, Marcus Lippold, Eckard Wefringhaus, Christoph Gondek

Publikováno v: Solar Energy Materials and Solar Cells. 127:104-110

The reactivity of HF(40 wt%)–HNO3(100 wt%)–H2SO4(97 wt%) etching mixtures towards conventional SiC-slurry and diamond-wire sawn silicon wafers has been studied. Sulfuric acid-rich mixtures exhibit adequate etching rates (r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e874fdfc6f899dd7e75dc99525b019b5
https://doi.org/10.1016/j.solmat.2014.04.006

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Etching Silicon with HF-H2O2-Based Mixtures: Reactivity Studies and Surface Investigations

Autor: Marcus Lippold, Edwin Kroke, Ingo Röver, Klaus Bohmhammel, Christoph Gondek

Publikováno v: The Journal of Physical Chemistry C. 118:2044-2051

In semiconductor and photovoltaic industries numerous process steps deal with etching and silicon surface modification. The present study focuses on the reactivity of HF-H2O2-based mixtures toward silicon surfaces in a wide range of concentrations. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::34b10eace0da512b61897472a08ab10f
https://doi.org/10.1021/jp4105757

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HF-(NH₄)₂S₂O₈-HCl Mixtures for HNO₃- and NOx-free Etching of Diamond Wire- and SiC-Slurry-Sawn Silicon Wafers: Reactivity Studies, Surface Chemistry, and Unexpected Pyramidal Surface Morphologies

Autor: André, Stapf, Christoph, Gondek, Marcus, Lippold, Edwin, Kroke

Publikováno v: ACS applied materialsinterfaces. 7(16)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::9e8d7256c894ecfced94da8664a4efab
https://pubmed.ncbi.nlm.nih.gov/25826145

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