Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Marcus Kastner"'
Autor:
Ivan Kasko, Manfred Moert, Walter Hartner, Marcus Kastner, Nicolas Nagel, Carlos A. Mazure, Thomas Mikolajick, Christine Dehm
Publikováno v:
Microelectronics Reliability. 41:947-950
Ferroelectric random access memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties like nonvolatility, small DRAM-like cell size, fast read and write as well as low voltage/low power beh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bac0186d204b4bcc5b1152d3ffa9d41
https://doi.org/10.1016/s0026-2714(01)00049-x
https://doi.org/10.1016/s0026-2714(01)00049-x
Autor:
S. Tiedke, D. Bolten, U. Boettger, U. Kall, Marcus Kastner, O. Lohse, T. Schmitz, Rainer Waser, M. Grossmann, G. Schindler, Walter Hartner
Publikováno v:
Integrated Ferroelectrics. 32:1-9
The fatigue behavior of PZT thin films was investigated. The fatigue excitation signal was changed with respect to the shape, the amplitude, and the frequency of the signal. It is shown that the fatigue excitation signal has a strong influence on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec6e8fbea055a6b5e2e97aa2e7ad1476
https://doi.org/10.1080/10584580108215672
https://doi.org/10.1080/10584580108215672
Autor:
Nicolas Nagel, Walter Hartner, Hermann Kohlstedt, Günther Schindler, Thomas Mikolajick, Christine Dehm, Marcus Kastner, Rainer Waser, Manfred Mört
Publikováno v:
Integrated Ferroelectrics. 37:125-134
The dependence of morphology of SrBi2Ta2O9 (SBT) deposited by Metal Organic Decomposition (MOD) on film thickness and annealing temperature during the crystallization anneal was investigated. From Atomic Force Microscope (AFM) images of these films i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b1d41b8382ab0c8908f4fa4197752f
https://doi.org/10.1080/10584580108015672
https://doi.org/10.1080/10584580108015672
Autor:
Manuela Schiele, Christine Dehm, Carlos Mazure, Barbara Hasler, Walter Hartner, Günther Schindler, Renate Bergmann, Volker Weinrich, Igor Kasko, Marcus Kastner
Publikováno v:
Integrated Ferroelectrics. 26:197-213
Ferroelectric memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties like non-volatility, small DRAM-like cell size, fast read and write as well as low voltage/low power behavior. Althou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c538925ed5165807e572efcef81e735b
https://doi.org/10.1080/10584589908215622
https://doi.org/10.1080/10584589908215622
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec69d91bd7cb45c963e20da034f2848
https://doi.org/10.7567/ssdm.1999.c-8-1
https://doi.org/10.7567/ssdm.1999.c-8-1
Autor:
Thomas Mikolajick, Igor Kasko, Christine Dehm, Manfred Mört, Marcus Kastner, Günther Schindler, Rainer Waser, Walter Hartner
Publikováno v:
Scopus-Elsevier
At crystallization temperatures of about 800°C bismuth layered oxide SrBi2Ta2O9 (SBT) deposited by MOD develops good ferroelectric properties for use in FeRAM devices. But scaling down the film thickness of SBT below 150 nm only shorts are measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4861e6362a59161b5311aaeff8eae0e
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034447931&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034447931&partnerID=MN8TOARS
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