Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Marcus Kaestner"'
Autor:
Philip D. Prewett, Cornelis W. Hagen, Claudia Lenk, Steve Lenk, Marcus Kaestner, Tzvetan Ivanov, Ahmad Ahmad, Ivo W. Rangelow, Xiaoqing Shi, Stuart A. Boden, Alex P. G. Robinson, Dongxu Yang, Sangeetha Hari, Marijke Scotuzzi, Ejaz Huq
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2855-2882 (2018)
Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the sub
Externí odkaz:
https://doaj.org/article/b7160a201e20410287590c4f76d1362d
Publikováno v:
2020 IEEE Physical Assurance and Inspection of Electronics (PAINE).
a new cross-section workflow for improved access to buried structures within electronic devices has been developed. A focused-ion beam scanning-electron microscope (FIB-SEM) system has been integrated by attaching a femtosecond laser to the loadlock
Autor:
Stephan Hiller, Stephen T. Kelly, Tobias Volkenandt, Marcus Kaestner, Cheryl Hartfield, Thomas Rodgers, Sascha Müller, Fabian Perez-Willard, Robin T. White, Jaehan Lee, Ben Tordoff, Andrew J. Holwell
Publikováno v:
Applied Microscopy
The development of the femtosecond laser (fs laser) with its ability to provide extremely rapid athermal ablation of materials has initiated a renaissance in materials science. Sample milling rates for the fs laser are orders of magnitude greater tha
Autor:
Yana Krivoshapkina, Diana Nechepurenko, Claudia Lenk, Steve Lenk, Ahmad Ahmad, Mervyn Jones, B. E. Volland, Tzvetan Ivanov, Zahid A. K. Durrani, Marcus Kaestner, Martin Hofmann, Chen Wang, Mathias Holz, Alexander Reum, Ivo W. Rangelow
Publikováno v:
Microelectronic Engineering. 192:77-82
Building low-power and high-density circuits requires new devices, which can be based for example on single electron effects. Single electron transistors (SET), which can operate at room temperature (RT), are candidates with high potential for the po
Publikováno v:
Microelectronic Engineering. 177:19-24
Throughput and resolution in serial lithographic methods are naturally two competing goals - improving one leads to a deterioration of the other. This is also valid for field emission based scanning probe lithography FE-SPL), wherein low-energetic el
Publikováno v:
Microelectronic Engineering. 177:78-86
Scanning probe lithography (SPL) describes a group of patterning techniques, wherein localized tip-sample interactions are utilized in order to directly or indirectly (via a resist film) generate nanoscale features. In this context, in field-emission
Publikováno v:
Microscopy and Microanalysis. 26:1978-1979
Publikováno v:
Microscopy and Microanalysis. 26:380-381
Autor:
Ingo Schulmeyer, Craig Nolen, Sascha Mueller, Tom Gregorich, Marcus Kaestner, Cheryl Hartfield
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
With the slowing of Moore’s Law, advanced packaging technologies are needed to fill the performance gap that was previously satisfied by silicon device scaling. In many cases, these advanced packaging technologies use heterogeneous integration with
Autor:
Ivo W. Rangelow, Marcus Kaestner
Publikováno v:
International Journal of Extreme Manufacturing. 2:032005
Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for pa