Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Marco Vacca"'
Autor:
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 12, Iss 4, p 58 (2022)
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room tem
Externí odkaz:
https://doaj.org/article/5445c67bdb144da2b09475a4ddbc0998
Autor:
Fabrizio Riente, Umberto Garlando, Giovanna Turvani, Marco Vacca, Massimo Ruo Roch, Mariagrazia Graziano
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 65-73 (2017)
The post-CMOS scenario poses many challenges to researchers. Innovative solutions must be found to further improve electronic circuits. Exploiting the potential offered by the third dimension is clearly one of the best possibilities available. Howeve
Externí odkaz:
https://doaj.org/article/7a948c50ee7d4200bcbf216e627488fe
Autor:
Milena Andrighetti, Giovanna Turvani, Giulia Santoro, Marco Vacca, Andrea Marchesin, Fabrizio Ottati, Massimo Ruo Roch, Mariagrazia Graziano, Maurizio Zamboni
Publikováno v:
Sensors, Vol 20, Iss 6, p 1681 (2020)
To live in the information society means to be surrounded by billions of electronic devices full of sensors that constantly acquire data. This enormous amount of data must be processed and classified. A solution commonly adopted is to send these data
Externí odkaz:
https://doaj.org/article/cbacac5ece53499d82d216bc730f84fb
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 10, Iss 1, p 7 (2020)
Recently, the Logic-in-Memory (LiM) concept has been widely studied in the literature. This paradigm represents one of the most efficient ways to solve the limitations of a Von Neumann’s architecture: by placing simple logic circuits inside or near
Externí odkaz:
https://doaj.org/article/38b3155f9f6a47ce9a8e9c0aa60845db
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 8, Iss 4, p 37 (2018)
Among all “beyond CMOS” solutions currently under investigation, nanomagnetic logic (NML) technology is considered to be one of the most promising. In this technology, nanoscale magnets are rectangularly shaped and are characterized by the intrin
Externí odkaz:
https://doaj.org/article/f666487d435c409aa5b2d2af7e958743
Autor:
Fabrizio Riente, Umberto Garlando, Giovanna Turvani, Marco Vacca, Massimo Ruo Roch, Mariagrazia Graziano
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 111-111 (2017)
In the above-named work, Tables 2–5 in the results section report the performance of different logic circuits. Unfortunately, due to a mistake, the bounding box area reported for all circuits is higher than their actual value. Tables 2–5 in [1] a
Externí odkaz:
https://doaj.org/article/d81b0d70ee054382b68edb216beecfe0
Autor:
Diego Favaro, Luca Gnoli, Valentin Ahrens, Simon Mendisch, Marco Vacca, Giovanna Turvani, Markus Becherer, Fabrizio Riente
Publikováno v:
IEEE Transactions on Magnetics. 59:1-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b9c4117b8b1055543c31d527aa55d18
https://doi.org/10.1109/tmag.2023.3255306
https://doi.org/10.1109/tmag.2023.3255306
Publikováno v:
Electronics, Vol 10, Iss 2291, p 2291 (2021)
Electronics
Volume 10
Issue 18
Electronics
Volume 10
Issue 18
The speed of modern digital systems is severely limited by memory latency (the “Memory Wall” problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic-in-Memory (LiM) represents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f54807ea879becefde2ef4cf700ca5b5
Autor:
Fabrizio Mo, Chiara Elfi Spano, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca
Publikováno v:
Electronics; Volume 12; Issue 6; Pages: 1487
NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are expected to replace FinFETs in a few years, as they provide highly electrostatic gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::311ebc856145d65373259cd411c6ee81
https://doi.org/10.3390/electronics12061487
https://doi.org/10.3390/electronics12061487