Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Marco Sacilotti"'
Publikováno v:
Applied Surface Science. 44:161-164
Interfaces between InP and GaInAs layers, grown by atmospheric pressure MOCVD, have been studied using Auger electron spectroscopy and Ar+ sputtering. The abruptness of the interfaces in this kind of epitaxial growth depends on the microscopic morpho
Autor:
Luciano Horiuchi, Pierre Ossart, Jean Decobert, M.J.S.P. Brasil, Lisandro Pavie Cardoso, Jean D. Ganière, Marco Sacilotti
Publikováno v:
Japanese Journal of Applied Physics. 30:L783-L785
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO)
Publikováno v:
ECS Meeting Abstracts. :614-614
not Available.
Akademický článek
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Autor:
Luc Imhoff, Isabelle Colombier, Patrice L. Baldeck, F. Donatini, Pierre Viste, Marco Sacilotti, Colette Dumas, Jean-Claude Vial
Publikováno v:
Scopus-Elsevier
Optical properties of novel micrometer-size Ga and GaN three-dimensional structures obtained by the metal-organic chemical vapour deposition (MOCVD) technique are presented in this letter. These structures are obtained as metallic three dimensions (3
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