Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Marco Mauceri ."'
Publikováno v:
Materials Science Forum. 1062:146-151
In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new g
Autor:
Manuel Kollmuss, Michael Schöler, Ruggero Anzalone, Marco Mauceri, Francesco La Via, Peter J. Wellmann
Publikováno v:
Materials Science Forum. 1062:74-78
One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, wi
Autor:
Michael Schoeler ., Philipp Schuh ., Grazia Litrico ., Francesco La Via ., Marco Mauceri ., Peter J. Wellmann .
Publikováno v:
Advanced Materials Proceedings
Autor:
Sebastiano Mercadante, Lucia Adamoli, Giuseppe Bellavia, Luisa Castellana, Tommaso Favara, Lavinia Insalaco, Marco Mauceri, Carla Scibilia, Mario Lo Mauro, Alessio Lo Cascio, Alessandra Casuccio
Publikováno v:
BMJ supportivepalliative care.
ObjectivesTo determine the patterns of storing, using and disposing of opioids among patients with advanced cancer followed at home.MethodsPatients who were prescribed opioids were selected. Prescribed opioids and their doses used for background pain
Publikováno v:
Crystal Growth & Design. 21:4046-4054
Autor:
Ruggero Anzalone, Cristiano Calabretta, Massimo Zimbone, Marco Mauceri, Francesco La Via, Viviana Scuderi
Publikováno v:
Materials Science Forum. 1004:120-125
We report the study of the effect of the growth rate and of the doping on the stress and the defect density of a Cubic Silicon Carbide (3C-SiC) bulk layer grown at low temperature on a silicon substrate. After the growth process, the silicon substrat
Autor:
Mattia Musolino, Egidio Carria, Danilo Crippa, Silvio Preti, Mani Azadmand, Marco Mauceri, Mathias Isacson, Michele Calabretta, Angelo Messina
Publikováno v:
Microelectronic Engineering. 274:111976
Autor:
Salvatore Tudisco, Francesco La Via, Clementina Agodi, Carmen Altana, Giacomo Borghi, Maurizio Boscardin, Giancarlo Bussolino, Lucia Calcagno, Massimo Camarda, Francesco Cappuzzello, Diana Carbone, Salvatore Cascino, Giovanni Casini, Manuela Cavallaro, Caterina Ciampi, Giuseppe Cirrone, Giacomo Cuttone, Alberto Fazzi, Dario Giove, Giuseppe Gorini, Luca Labate, Gaetano Lanzalone, Grazia Litrico, Giuseppe Longo, Domenico Lo Presti, Marco Mauceri, Roberto Modica, Maurizio Moschetti, Annamaria Muoio, Franco Musumeci, Gabriele Pasquali, Giada Petringa, Nicolò Piluso, Giacomo Poggi, Stefania Privitera, Sebastiana Puglia, Valeria Puglisi, Marica Rebai, Sabina Ronchin, Antonello Santangelo, Andrea Stefanini, Antonio Trifirò, Massimo Zimbone
Publikováno v:
Sensors, Vol 18, Iss 7, p 2289 (2018)
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experi
Externí odkaz:
https://doaj.org/article/45f40ba13ec9464193b3c28ec80af950
Autor:
Peter J. Wellmann, Matthias Arzig, Jonas Ihle, Manuel Kollmuss, Johannes Steiner, Marco Mauceri, Danilo Crippa, Francesco La Via, Michael Salamon, Norman Uhlmann, Melissa Roder, Andreas N. Danilewsky, Binh Duong Nguyen, Stefan Sandfeld
Publikováno v:
Materials science forum 1062, 104-112 (2022). doi:10.4028/p-05sz31
The review on bulk growth of SiC includes a basic overview on the widely used physical vapor transport method for processing of 4H-SiC boules as well as the discussion of three current research topics: (a) Sublimation bulk growth of large area, frees
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a95c8ee4d9b34d1b21ff7a2acda8935
https://juser.fz-juelich.de/record/908589
https://juser.fz-juelich.de/record/908589
Autor:
Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, Annalisa Cannizzaro, Marco Mauceri, Danilo Crippa, Simona Boninelli, Francesco La Via
Publikováno v:
Materials Science Forum
This study offers a comprehensive examination of the behavior of 3C-SiC crystals grown on 4° off-axis (100) Si substrates with different off-axis angles along and for N and Al doping, respectively. The investigation takes advantage of molten KOH etc