The X-Hall Sensor: Toward Integrated Broadband Current Sensing

Autor: Pier Andrea Traverso, Aldo Romani, Marco Tartagni, Roberta Ramilli, Roberto Canegallo, Marco Marchesi, Marco Crescentini, Gian Piero Gibiino

Publikováno v: IEEE Transactions on Instrumentation and Measurement

This article presents the X-Hall sensor, a viable sensing architecture for implementing a silicon-integrated, broadband, current/magnetic sensor. The X-Hall sensor overcomes the bandwidth limit of the state-of-the-art Hall sensors by replacing the sp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::177706c95cf881296f9fee49d2095e6a
https://doi.org/10.1109/tim.2020.3036764

An image-based path planning approach for a two arm cooperative robot

Autor: Antonio Visioli, Marco Marchesi, Cosmin Copot

Publikováno v: ICSTCC
25th International Conference on System Theory, Control and Computing, (ICSTCC), OCT 20-23, 2021, Iasi, ROMANIA
2021 25th International Conference on System Theory, Control and Computing (ICSTCC)

In this paper an image-based path planning approach for a dual arm robot is presented. The main idea introduced here is to develop an algorithm which is able to calculate a goal-path for the robot using visual features extracted from an image. The ro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ff3b0314d6c2b8cabe98c42eab86b2c
https://doi.org/10.1109/icstcc52150.2021.9607289

Experimental Assessment of a Broadband Current Sensor based on the X-Hall Architecture

Autor: Marco Marchesi, Marco Crescentini, Roberta Ramilli, Pier Andrea Traverso, Marco Tartagni, Gian Piero Gibiino, Roberto Canegallo, Aldo Romani

Publikováno v: I2MTC
2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The X-Hall sensor is presented, characterized and proposed as a viable architecture for silicon-integrated, broadband, current/magnetic-field measurements. The X-Hall architecture overcomes the methodological bandwidth limit of state-of-the-art Hall-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8d94671a7cb37a7c883d2249d08a22a
https://doi.org/10.1109/i2mtc43012.2020.9128994

Boosting Static and Dynamic Performance of Integrated Solid-State Diodes By Peripheral Integration of Nanostructured Porous Silicon

Autor: Fabrizio Fausto Renzo Toia, Giuseppe Barillaro, Marco Sambi, Riccardo Depetro, Marco Morelli, Marco Marchesi, Lucanos Marsilio Strambini, Alessandro Paghi

Publikováno v: ECS Meeting Abstracts. :1015-1015

Over the past two decades, different nanomaterials have been proposed for the design of novel silicon-based electronic devices or to push the performance of existing ones, leveraging the unique properties of charge carriers traveling in meso-to-nano

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::617cbd3fced033a00fe91d80c00e3b98
https://doi.org/10.1149/ma2021-01301015mtgabs

Improving the figure-of-merit of integrated solid-state diodes through the use of nanostructured porous silicon

Autor: Marco Marchesi, Fabrizio Fausto Renzo Toia, Giuseppe Barillaro, Marco Morelli, Lucanos Marsilio Strambini, Marco Sambi, Simone Dario Mariani

Publikováno v: 233rd ECS Meeting, pp. 89–92, Seattle; United States, 13/05/2018, 17/05/2018
info:cnr-pdr/source/autori:Strambini, L. M.; Marchesi, M.; Sambi, M.; Toia, F.; Mariani, S. D.; Morelli, M.; Barillaro, G./congresso_nome:233rd ECS Meeting/congresso_luogo:Seattle; United States/congresso_data:13%2F05%2F2018, 17%2F05%2F2018/anno:2018/pagina_da:89/pagina_a:92/intervallo_pagine:89–92

Here, we report on the use of nanostructured porous-silicon (PS) technology as an alternative to standard technologies to increase the breakdown voltage VBR of silicon-based integrated solid-state diodes, while leaving the on-state resistance Ron una

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::710f60d7418a4ac2a445254ff5864218
http://www.cnr.it/prodotto/i/395386