Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Marco M. Furchi"'
Autor:
Lukas Mennel, Marco M. Furchi, Stefan Wachter, Matthias Paur, Dmitry K. Polyushkin, Thomas Mueller
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
Strain is an effective tool to tune the optoelectronic properties of two-dimensional materials. Here, the authors demonstrate that second harmonic generation can be used to extract the full strain tensor of MoS2 and to spatially image its two-dimensi
Externí odkaz:
https://doaj.org/article/6581c6d3522e4494a84d7188cc44ca24
Autor:
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 972-978 (2018)
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the h
Externí odkaz:
https://doaj.org/article/cc3c1d6d53254562a8b094a90e326b52
Autor:
Gabriele Grosso, Hyowon Moon, Benjamin Lienhard, Sajid Ali, Dmitri K. Efetov, Marco M. Furchi, Pablo Jarillo-Herrero, Michael J. Ford, Igor Aharonovich, Dirk Englund
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Inhomogeneous spectral distribution and multi-photon emission are currently hindering the use of defects in layered hBN as reliable single photon emitters. Here, the authors demonstrate strain-controlled wavelength tuning and increased single photon
Externí odkaz:
https://doaj.org/article/85cea07555dc46ea9b6dfe1ed0f33551
Autor:
Franz Schanovsky, Bernhard Stampfer, Gerhard Rzepa, Theresia Knobloch, Tibor Grasser, Marco M. Furchi, Thomas Mueller, Michael Waltl, Yury Yu. Illarionov
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 972-978 (2018)
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the h
Autor:
Ya-Qing Bie, Jiabao Zheng, Yuan Cao, Gabriele Grosso, Darius Bunandar, Jing Kong, Takashi Taniguchi, Kenji Watanabe, Marco M. Furchi, Mikkel Heuck, Lin Zhou, Dirk Englund, Efrén Navarro-Moratalla, Dmitri K. Efetov, Pablo Jarillo-Herrero
Publikováno v:
Nature Nanotechnology. 12:1124-1129
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading a
Autor:
Benjamin Lienhard, Gabriele Grosso, Dmitri K. Efetov, Michael J. Ford, Hyowon Moon, Pablo Jarillo-Herrero, Igor Aharonovich, Dirk Englund, Marco M. Furchi, Sajid Ali
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Nature Communications
Nature Communications
Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reporte
Autor:
Tibor Grasser, Marco M. Furchi, Michael Waltl, Yu. Yu. Illarionov, Aday J. Molina-Mendoza, Theresia Knobloch, Thomas Mueller
Publikováno v:
IRPS
We perform a detailed reliability study of MoS 2 , MoSe 2 , MoTe 2 and WS 2 field-effect transistors fabricated on the same SiO 2 /Si substrate. First we analyze the sensitivity of these devices to adsorbate-type trapping sites on top of the channel
Autor:
Igor Aharonovich, Marco M. Furchi, Dmitri K. Efetov, Benjamin Lienhard, Gabriele Grosso, Michael Walsh, Sajid Ali, Hyowon Moon, Dirk Englund, Michael J. Ford, Pablo Jarillo-Herrero
© 2016 Optical Society of America. We demonstrate that strain control of exfoliated hexagonal boron nitride allows spectral tuning of single photon emitters over 6 meV. We propose a material processing that sharply improves the single-photon purity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb2902151863b8a5df5b2393f73eb05f
https://hdl.handle.net/10453/126486
https://hdl.handle.net/10453/126486
Autor:
Franz Schanovsky, Tibor Grasser, M. Jech, Theresia Knobloch, Gerhard Rzepa, Marco M. Furchi, Bernhard Stampfer, Michael Waltl, Yury Yu. Illarionov, T. Müller
Publikováno v:
ESSDERC
The hysteresis in the gate transfer characteristics of transistors made of two-dimensional materials is one of the most obvious problems of this novel technology. Here we attempt for the first time to develop a physical modeling approach for describi
Autor:
Ya-Qing, Bie, Gabriele, Grosso, Mikkel, Heuck, Marco M, Furchi, Yuan, Cao, Jiabao, Zheng, Darius, Bunandar, Efren, Navarro-Moratalla, Lin, Zhou, Dmitri K, Efetov, Takashi, Taniguchi, Kenji, Watanabe, Jing, Kong, Dirk, Englund, Pablo, Jarillo-Herrero
Publikováno v:
Nature nanotechnology. 12(12)
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading a