Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Marco Gibertini"'
Autor:
Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract In twisted two-dimensional (2D) magnets, the stacking dependence of the magnetic exchange interaction can lead to regions of ferromagnetic and antiferromagnetic interlayer order, separated by non-collinear, skyrmion-like spin textures. Recen
Externí odkaz:
https://doaj.org/article/e2dd53fd4ec64885b9e2f01a8fc27811
Autor:
Xiaohanwen Lin, Fan Wu, Sara A. López-Paz, Fabian O. von Rohr, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Physical Review Research, Vol 6, Iss 1, p 013185 (2024)
We investigate the c-direction conduction in CrSBr in the linear regime, which is not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low current. The resistivity, which is 10^{8}−10^{11} times larger th
Externí odkaz:
https://doaj.org/article/68456197880d44c1a0213a3a29401b1c
Autor:
Antimo Marrazzo, Marco Gibertini
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-10 (2022)
Abstract Quantum spin Hall insulators (QSHI) have been proposed to power several applications, many of which rely on the possibility to switch on and off the non-trivial topology. Typically this control is achieved through strain or electric fields,
Externí odkaz:
https://doaj.org/article/96d90dd0f1964a59ba8426ee33bb2465
Autor:
Fengrui Yao, Volodymyr Multian, Zhe Wang, Nicolas Ubrig, Jérémie Teyssier, Fan Wu, Enrico Giannini, Marco Gibertini, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-1 (2023)
Externí odkaz:
https://doaj.org/article/9e67e9e46c074898a054feabf616b9ca
Autor:
Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco, Nicolas Ubrig, Takashi Taniguchi, Kenji Watanabe, Enrico Giannini, Marco Gibertini, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Many standard techniques for investigating magnetic properties in the bulk are ill suited to atomically thin van der Waals materials. Here, Wang et al take a prototypical van der Waals ferromagnet, Chromium Bromide, and show how tunneling conductance
Externí odkaz:
https://doaj.org/article/f8e1782d469e4008a15a86a1f3b8c586
Autor:
Zhe Wang, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Martin Kroner, Marco Gibertini, Takashi Taniguchi, Kenji Watanabe, Ataç Imamoğlu, Enrico Giannini, Alberto F. Morpurgo
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Layered van der Waals compounds offer opportunities to visit new physical phenomena in two dimensional materials. Here the authors report large tunneling magnetoresistance through exfoliated CrI3 crystals and attribute its evolution to the multiple t
Externí odkaz:
https://doaj.org/article/11526c5d779a414c9baf794ee9b8279b
Autor:
Giovanni Pizzi, Marco Gibertini, Elias Dib, Nicola Marzari, Giuseppe Iannaccone, Gianluca Fiori
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-ef
Externí odkaz:
https://doaj.org/article/49ae8650ef164d33965db1e2de9c405b
Publikováno v:
Physical Review Research, Vol 2, Iss 1, p 012063 (2020)
Recently, the very first large-gap Kane-Mele quantum spin Hall insulator was predicted to be monolayer jacutingaite (Pt_{2}HgSe_{3}), a naturally occurring exfoliable mineral discovered in Brazil in 2008. The stacking of quantum spin Hall monolayers
Externí odkaz:
https://doaj.org/article/0bf4c57ab8544a74a25ecc4d3a51e64b
Autor:
Thibault Sohier, Evgeniy Ponomarev, Marco Gibertini, Helmuth Berger, Nicola Marzari, Nicolas Ubrig, Alberto F. Morpurgo
Publikováno v:
Physical Review X, Vol 9, Iss 3, p 031019 (2019)
We report a combined experimental and theoretical investigation that reveals a new mechanism responsible for the enhancement of electron-phonon coupling in doped semiconductors in which multiple inequivalent valleys are simultaneously populated. Usin
Externí odkaz:
https://doaj.org/article/29f9ebb90b5b47e6adf59011ce9c3892
Autor:
Fan Wu, Marco Gibertini, Kenji Watanabe, Takashi Taniguchi, Ignacio Gutiérrez‐Lezama, Nicolas Ubrig, Alberto F. Morpurgo
Publikováno v:
Advanced Materials.
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor oper