Výsledky vyhledávání - "Marco De Dominicis"

High power GaN-HEMT SPDT switches for microwave applications

Autor: C. Proietti, Claudio Lanzieri, A. Bettidi, Antonio Manna, Ernesto Limiti, Marco Peroni, P. Romanini, Antonio Cetronio, Marco De Dominicis, Walter Ciccognani

Publikováno v: International Journal of RF and Microwave Computer-Aided Engineering. 19:598-606

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7090d8d03432f89abc3a49f6b440f5f3
https://doi.org/10.1002/mmce.20383

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High-power monolithic AlGaN/GaN high electron mobility transistor switches

Autor: Mauro Ferrari, Marco Peroni, Walter Ciccognani, Vincenzo Alleva, Ernesto Limiti, Claudio Lanzieri, A. Bettidi, Marco De Dominicis

Publikováno v: International Journal of Microwave and Wireless Technologies. 1:339-345

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8c09f1960472767693dbcc83c4e7c1fc
https://doi.org/10.1017/s1759078709990183

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Eales' Disease and Juvenile Glaucoma: A Case Report

Autor: Gianluca Scuderi, Marco De Dominicis, Maria Rita Tomei, Cristina Moretto, Federico Ricci

Publikováno v: Annals Of Ophthalmology. 37:129-132

Eales’ disease is an idiopathic vasculopathy affecting the retina of young adults. The disease is characterized by sheathing of the retinal vessels and areas of nonperfusion in the peripheral retina. Recurrent vitreous and retinal hemorrhages can l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1eb72963b60c0b0bd9e84e2020efadf9
https://doi.org/10.1385/ao:37:2:129

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Direct noise characterisation of microwave FETs using 50 Ohm noise figure and Y-parameters measurements

Autor: Marco De Dominicis, Franco Giannini, Ernesto Limiti, Antonio Serino

A fast and accurate method to determine the noise parameters of microwave FETs, based on a new expression of the device noise figure as a function of the Y-parameters and two equivalent noise temperatures, is presented. The method requires only the m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f1532555599bab594ead110d90883c0
http://hdl.handle.net/2108/18088

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