Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Marco A. Villena"'
Autor:
Fernando Aguirre, Abu Sebastian, Manuel Le Gallo, Wenhao Song, Tong Wang, J. Joshua Yang, Wei Lu, Meng-Fan Chang, Daniele Ielmini, Yuchao Yang, Adnan Mehonic, Anthony Kenyon, Marco A. Villena, Juan B. Roldán, Yuting Wu, Hung-Hsi Hsu, Nagarajan Raghavan, Jordi Suñé, Enrique Miranda, Ahmed Eltawil, Gianluca Setti, Kamilya Smagulova, Khaled N. Salama, Olga Krestinskaya, Xiaobing Yan, Kah-Wee Ang, Samarth Jain, Sifan Li, Osamah Alharbi, Sebastian Pazos, Mario Lanza
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-40 (2024)
Abstract Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel. The low communication bandwidth between memory and proc
Externí odkaz:
https://doaj.org/article/2747dc5462eb47f38960b290c0cdbb9e
Autor:
Juan B. Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia B. González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance ha
Externí odkaz:
https://doaj.org/article/8abc1b18881346218ff8c2bbe6e7d4a8
Autor:
Sebastian Pazos, Thales Becker, Marco Antonio Villena, Wenwen Zheng, Yaqing Shen, Yue Yuan, Osamah Alharbi, Kaichen Zhu, Juan Bautista Roldán, Gilson Wirth, Felix Palumbo, Mario Lanza
Publikováno v:
Advanced Functional Materials. :2213816
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3440a526e300c6a3f51c55e41fd1a8e0
https://doi.org/10.1002/adfm.202213816
https://doi.org/10.1002/adfm.202213816
Publikováno v:
Chemistry of Materials. 31:8742-8751
Rutile structure IrO2 and the related alloy Ti1–xIrxO2 are studied by ab initio simulations. Iridium oxide attracts interest due its exotic metal–insulator transition which may have important appli...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913a5f038f4d68a3d6224da7e846cd58
https://doi.org/10.1021/acs.chemmater.9b02507
https://doi.org/10.1021/acs.chemmater.9b02507
Autor:
Luca Larcher, Bastien Beltrando, Milan Pešić, Jack Strand, Shruba Gangopadhyay, Enrico Piccinini, Alexander L. Shluger, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Andrea Padovani, Tony Chiang, Matteo Bertocchi
Publikováno v:
IRPS
Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1954902a98636cac560dfcb1565bb29
https://doi.org/10.1109/irps46558.2021.9405118
https://doi.org/10.1109/irps46558.2021.9405118
Autor:
Chao Wen, Mario Lanza, Fei Hui, Xu Jing, Ana M. Aguilera, Yuanyuan Shi, Juan Bautista Roldán, Christian Acal, Marco A. Villena, D. Maldonado, Jing Kong, Francisco Jiménez-Molinos, Juan Eloy Ruiz-Castro
Publikováno v:
IRPS
Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V 2dmax1 and V 2dmax2 , have been analyzed statistically in an exhaustive manner. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ded194e517894450b9827429b146f4
https://doi.org/10.1109/irps45951.2020.9129147
https://doi.org/10.1109/irps45951.2020.9129147
Autor:
Francisco Jiménez-Molinos, Juan Bautista Roldán, Carol de Benito, Rodrigo Picos, Mohamad Moner Al Chawa, Marco A. Villena
Publikováno v:
International Journal of Circuit Theory and Applications. 46:29-38
Summary We analyzed resistive switching-based memristors by using the charge–flux relations instead of the traditional current–voltage approach. We employed simulated and experimental data to develop a model that can be easily included in circuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a93a19490adf5742bab37b472acdf93
https://doi.org/10.1002/cta.2397
https://doi.org/10.1002/cta.2397
Autor:
Francisco Jiménez-Molinos, Mario Lanza, Enrique Miranda, Marco A. Villena, Jordi Suñé, Juan Bautista Roldán
Publikováno v:
Journal of Computational Electronics. 16:1095-1120
In the last few years, resistive random access memory (RRAM) has been proposed as one of the most promising candidates to overcome the current Flash technology in the market of non-volatile memories. These devices have the ability to change their res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c8c8c641b337357656c0b5fd4a0fe4
https://doi.org/10.1007/s10825-017-1074-8
https://doi.org/10.1007/s10825-017-1074-8
Autor:
Chao Wen, Tao Wang, Xianhu Liang, Marco A. Villena, Kaichen Zhu, Yuanyuan Shi, Shaochuan Chen, Bin Yuan, Mario Lanza, Fei Hui
Publikováno v:
ACS applied materialsinterfaces. 11(41)
Two-dimensional (2D) material-based memristors have shown several properties that are not shown by traditional ones, such as high transparency, robust mechanical strength and flexibility, superb chemical stability, enhanced thermal heat dissipation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0ecbddbce76cf408aecb7da9b804c1b
https://pubmed.ncbi.nlm.nih.gov/31529969
https://pubmed.ncbi.nlm.nih.gov/31529969
Autor:
Fei Hui, Yuanyuan Shi, Mario Lanza, Kaichen Zhu, Marco A. Villena, Tao Wang, Chao Wen, Xianhu Liang, Bin Yuan, Shaochuan Chen
Publikováno v:
IRPS
Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area $(\geq 10^{4} \mu \text{m}^{2})$ , in which currents in each resistive state may be d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97e7277a8f2354fcd6ce1c78243cf0b2
https://doi.org/10.1109/irps.2019.8720485
https://doi.org/10.1109/irps.2019.8720485