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Autor:
Guilherme Gindri Pereira, Renan R. Duarte, J. Marcos Alonso, Marco A. Dalla Costal, Carlos Henrique Barriquello
Publikováno v:
IAS
In the past few years, wide-bandgap (WBG) semiconductors based on gallium nitride (GaN) have appeared as a solution to enable the evolution of power electronics. These devices allow for higher operating frequencies without sacrificing performance, es