Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Marcin, Zajac"'
Publikováno v:
Mathematics, Vol 12, Iss 15, p 2342 (2024)
In this paper, we propose a discrete Hamilton–Jacobi theory for (discrete) Hamiltonian dynamics defined on a (discrete) contact manifold. To this end, we first provide a novel geometric Hamilton–Jacobi theory for continuous contact Hamiltonian dy
Externí odkaz:
https://doaj.org/article/24af7ce075e04a4095e8c22c5774edde
Autor:
Damian Wlodarczyk, Mikolaj Amilusik, Katarzyna M. Kosyl, Maciej Chrunik, Krystyna Lawniczak-Jablonska, Michal Strankowski, Marcin Zajac, Volodymyr Tsiumra, Aneta Grochot, Anna Reszka, Andrzej Suchocki, Tomasz Giela, Przemyslaw Iwanowski, Michal Bockowski, Hanka Przybylinska
Publikováno v:
ACS Omega. 7:18382-18408
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748beb71b1226a68562ce7215751b051
https://doi.org/10.1021/acsomega.2c00669
https://doi.org/10.1021/acsomega.2c00669
Autor:
Leszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała, Sandrine Juillaguet, Sylvie Contreras
Publikováno v:
Materials; Volume 15; Issue 20; Pages: 7069
This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea4bc2305d3fdcb439bb6464b817eb0c
https://pubmed.ncbi.nlm.nih.gov/36295135
https://pubmed.ncbi.nlm.nih.gov/36295135
Autor:
Jakub Szlachetko, Joanna Stȩpień, Dariusz Banaś, Anna Wach, Krzysztof Tyrała, Marcin Zaja̧c, Wojciech M. Kwiatek, Michal Nowakowski, Joanna Czapla-Masztafiak, Wojciech Błachucki, Paweł P. Jagodziński, Klaudia Wojtaszek, Wiktoria Stańczyk
Publikováno v:
The Journal of Physical Chemistry A. 125:50-56
The electronic structure of transition-metal oxides is a key component responsible for material's optical and chemical properties. Specifically for metal-oxide structures, the crystal-field interaction determines the shape, strength, and occupancy of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0a9a609db1979e632b4ce2bd20b9136
https://doi.org/10.1021/acs.jpca.0c07955
https://doi.org/10.1021/acs.jpca.0c07955
Autor:
Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras
Publikováno v:
physica status solidi (a). :2200769
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cfd2a8852c752acfe746997506ee192
https://doi.org/10.1002/pssa.202200769
https://doi.org/10.1002/pssa.202200769
Autor:
Damian Wlodarczyk, Mikolaj Amilusik, Katarzyna M. Kosyl, Maciej Chrunik, Krystyna Lawniczak-Jablonska, Michal Strankowski, Marcin Zajac, Volodymyr Tsiumra, Aneta Grochot, Anna Reszka, Andrzej Suchocki, Tomasz Giela, Przemyslaw Iwanowski, Michal Bockowski, Hanka Przybylinska
Publikováno v:
ACS Omega. 8:3539-3539
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e635ce74175516d889806588dea244
https://doi.org/10.1021/acsomega.2c08078
https://doi.org/10.1021/acsomega.2c08078
Autor:
Robert Kucharski, Łukasz Janicki, Marcin Zajac, Monika Welna, Marcin Motyka, Czesław Skierbiszewski, Robert Kudrawiec
Publikováno v:
Crystals, Vol 7, Iss 7, p 187 (2017)
GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral ran
Externí odkaz:
https://doaj.org/article/d241bc2721474e79902272c6c82bc72e
Autor:
Marcin Zajac, Marcin Turek, Michal Bockowski, M. Fijalkowski, Karolina Grabianska, Piotr Jaroszynski, M. Amilusik
Publikováno v:
Gallium Nitride Materials and Devices XVI.
Implantation of Ga ions into ammonothermal GaN crystals is proposed as a method of controlling the concentration of gallium vacancies. Ultra-high pressure annealing (UHPA) is expected to facilitate the diffusion of the implanted Ga ions into the enti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24300bdcbc67b56d25af81535c83252c
https://doi.org/10.1117/12.2577017
https://doi.org/10.1117/12.2577017
Autor:
Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, M. Bockowski, Karolina Grabianska, Dariusz Wasik, Jaroslaw Z. Domagala, Marcin Zajac, A. Gwardys-Bak, A. Puchalski, Robert Kucharski
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 64:63-74
Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b255b4a7a34de72d79df573a726b1898
https://doi.org/10.1016/j.pcrysgrow.2018.05.001
https://doi.org/10.1016/j.pcrysgrow.2018.05.001
Autor:
Michael A. Reshchikov, Marcin Zajac, M. Iwinska, Michal Bockowski, Karolina Grabianska, M. Vorobiov
Publikováno v:
Journal of Applied Physics. 129:095703
Photoluminescence (PL) from GaN substrates fabricated by the ammonothermal growth method was studied in a wide range of temperatures and excitation intensities, both with steady-state and time-resolved PL techniques. Three defect-related PL bands wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4711fe16859ede3692b46809965bd38f
https://doi.org/10.1063/5.0045019
https://doi.org/10.1063/5.0045019