Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Marcelo Schupbach"'
Autor:
Brice McPherson, Tim Foster, Sayan Seal, Marcelo Schupbach, Lauren E. Kegley, Brandon Passmore, Robert Shaw, Ty McNutt
Publikováno v:
2019 IEEE International Workshop on Integrated Power Packaging (IWIPP).
Power cycling is an accelerated reliability test used to induce package-related failure mechanisms through exposure to cyclic thermal and electrical stress. As SiC devices continue to grow in adoption for high power density, high efficiency applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5de1c773bf3e35067d4f31a41c227d6
https://doi.org/10.1109/iwipp.2019.8799100
https://doi.org/10.1109/iwipp.2019.8799100
Autor:
Tyler Adamson, Chirag R. Kharangate, Mehdi Asheghi, Rana Alizadeh, Yue Zhao, Kenneth E. Goodson, Juan Carlos Balda, Marcelo Schupbach, Ki Wook Jung, Shanshan Long
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
High power density is an important requirement for traction motor drives as transportation systems continue their electrification trends. Increasing power density requires a system-level approach addressing all inverter components; particularly, powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaa4cff9610ac364beaa98eeb090f551
https://doi.org/10.1109/ecce.2018.8558380
https://doi.org/10.1109/ecce.2018.8558380
Autor:
Marcelo Schupbach
Publikováno v:
Extreme Environment Electronics ISBN: 9781315216911
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7905da0521838af55a1a975ca83317a6
https://doi.org/10.1201/b13001-70
https://doi.org/10.1201/b13001-70
Publikováno v:
2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents an improved design space for AC/DC converters utilizing 1,000V SiC MOSFETs by taking advantage of their low conduction and switching losses in a simple and cost-effective two-level topology. An efficiency- and cost-optimized 20 kW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d5446b0ecd5409c06e6714cc23c78a
https://doi.org/10.1109/apec.2017.7930999
https://doi.org/10.1109/apec.2017.7930999
Autor:
Marcelo Schupbach, Caleb Paul Gutshall, A.B. Lostetter, Homer Alan Mantooth, I. Escorcia-Carranza, Khoa Minh Phan, Bradley A. Reese, Javier Valle-Mayorga
Publikováno v:
IEEE Transactions on Power Electronics. 27:4417-4424
Silicon Carbide (SiC) power semiconductors have shown the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities make SiC an attractiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b02f7b75b4915f1caa688aa01416e0
https://doi.org/10.1109/tpel.2011.2182213
https://doi.org/10.1109/tpel.2011.2182213
Publikováno v:
Materials Science Forum. :1253-1256
APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac683e8efebf294507e7b30c7104fd1
https://doi.org/10.4028/www.scientific.net/msf.717-720.1253
https://doi.org/10.4028/www.scientific.net/msf.717-720.1253
Publikováno v:
Materials Science Forum. :746-749
APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edeb47e8fca0bb1f409dfb8c20ad9a26
https://doi.org/10.4028/www.scientific.net/msf.679-680.746
https://doi.org/10.4028/www.scientific.net/msf.679-680.746
Autor:
Marcelo Schupbach, W. Cilio, Jared Hornberger, Alexander B. Lostetter, Bradley A. Reese, B. McPherson, Robert Shaw, Edgar Cilio, E. Heinrichs, Jack Bourne, Ty McNutt
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2011:000159-000166
The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85866f5b60df7316b534fbb1edeb874b
https://doi.org/10.4071/hiten-paper5-jhornberger
https://doi.org/10.4071/hiten-paper5-jhornberger
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
Publikováno v:
Materials Science Forum. :949-952
In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET transistor at temperatures up to 525 °C and built a Spice model based on the characterization data. The tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e40c2cf557e4fe851474d2804768f6e
https://doi.org/10.4028/www.scientific.net/msf.645-648.949
https://doi.org/10.4028/www.scientific.net/msf.645-648.949
Autor:
Carina Zaring, Marcelo Schupbach, Martin Domeij, J. Bource, Mikael Östling, Muhammad Nawaz, H.S. Lee
Publikováno v:
Materials Science Forum. :825-828
This paper addresses the performance of SiC NPN Bipolar Junction Transistors (BJTs) at high and low temperature. A current gain of 50 at room temperature was obtained which decreases to 25 at 275 oC. A maximum current gain (β) of 111 has been report
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdbc21ceae74098358b0bd7635a3a717
https://doi.org/10.4028/www.scientific.net/msf.615-617.825
https://doi.org/10.4028/www.scientific.net/msf.615-617.825