Broadband optical spin dependent reflection in self-assembled GaAs-based nanowires asymmetrically hybridized with Au

Autor: Emilija Petronijevic, Alessandro Belardini, Grigore Leahu, Teemu Hakkarainen, Marcelo Rizzo Piton, Eero Koivusalo, Concita Sibilia

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)

Abstract Hybridization of semiconductor nanostructures with asymmetric metallic layers offers new paths to circular polarization control and chiral properties. Here we study, both experimentally and numerically, chiral properties of GaAs-based nanowi

Externí odkaz: https://doaj.org/article/e77d0d3d16d54092a33db82472976cb0

Publisher Correction: Demonstration of extrinsic chirality of photoluminescence with semiconductor-metal hybrid nanowires

Autor: Teemu Hakkarainen, Emilija Petronijevic, Marcelo Rizzo Piton, Concita Sibilia

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-2 (2021)

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Externí odkaz: https://doaj.org/article/f8ef55f94e264dd7ac35d9c464ba4e25

Síntese e caracterização do composto SrTi1-xMnxO3 nanoestruturado

Autor: Marcelo Rizzo Piton

Publikováno v: Biblioteca Digital de Teses e Dissertações da USPUniversidade de São PauloUSP.

Amostras nanoestruturadas do sistema SrTi1-xMnxO3 (STM) com x = 0%, 0.5%, 1%, 2.5%, 5% e 10% na forma de pó foram sintetizadas através do método dos precursores poliméricos. As propriedades térmicas, estruturais e ópticas das amostras STM calci

Externí odkaz: http://www.teses.usp.br/teses/disponiveis/18/18158/tde-29012015-215637/

Effect of growth techniques on the structural, optical and electrical properties of indium doped TiO2 thin films

Autor: Fahad S. Alghamdi, Yara Galvão Gobato, Marcelo Rizzo Piton, Abdulrahman M. Albadri, Maryam Al Huwayz, Khalid M. Aljaber, Faisal S. Al mashary, Mohamed Henini, Ahmed Y. Alyamani, Hamad Albrithen, H. V. A. Galeti, Noor Al Saqri, Suelen de Castro, Sami A. Alhusaini, Arlon Fernando da Silva, Jorlandio F. Felix, Ali Z. Alanazi, Ariano De Giovanni Rodrigues

Publikováno v: Journal of Alloys and Compounds. 766:194-203

We have investigated the effect of the growth techniques on the structural, the electrically and optically active defects in Indium doped TiO2 thin films grown by pulsed laser deposition (PLD) and sputtering techniques. X-ray diffraction (XRD) and Ra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c243aadd8c513cfde075ed235248102
https://doi.org/10.1016/j.jallcom.2018.06.360

Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires

Autor: Donald Lupo, Edson R. Leite, Eero Koivusalo, Yara Galvão Gobato, Vladimir G. Dubrovskii, Marcelo Rizzo Piton, Mircea Guina, H. V. A. Galeti, Elisabetta Maria Fiordaliso, Jefferson Bettini, Ariano De Giovanni Rodrigues, Egor D. Leshchenko, Teemu Hakkarainen, PM Paul Koenraad, Sebastian Koelling

Publikováno v: Hakkarainen, T, Piton, M R, Fiordaliso, E M, Leshchenko, E D, Koelling, S, Bettini, J, Avanco Galeti, H V, Koivusalo, E, Gobato, Y G, Rodrigues, A D G, Lupo, D, Koenraad, P M, Leite, E R, Dubrovskii, V G & Guina, M 2019, ' Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires ', Physical Review Materials, vol. 3, no. 8, 086001 . https://doi.org/10.1103/PhysRevMaterials.3.086001
Physical Review Materials, 3(8):086001. American Physical Society

Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a typical n-type dopant for GaAs, but in nanowires it often suffers from a s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::477253aa10634f113cbc65cdae2281e4
https://trepo.tuni.fi/handle/10024/127022