Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Marcelo B, Barbosa"'
Autor:
Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-1 (2024)
Externí odkaz:
https://doaj.org/article/aaba7421c0f44777b0e57d0f2915655a
Autor:
Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β - $${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 could strongly influence and contribute to the d
Externí odkaz:
https://doaj.org/article/1f53832feefd4d8ea3955911ea2cf7c3
Autor:
Marcelo B. Barbosa, João Guilherme Correia, Katharina Lorenz, Armandina M. L. Lopes, Gonçalo N. P. Oliveira, Abel S. Fenta, Juliana Schell, Ricardo Teixeira, Emilio Nogales, Bianchi Méndez, Alessandro Stroppa, João Pedro Araújo
Publikováno v:
Scientific Reports. 12
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor $$\beta$$ β -$${\mathrm{Ga}_{2}\mathrm{O}_{3}}$$ Ga 2 O 3 could strongly influence and contribute to the development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58fb1b7f00ed0f9606cf0190e48c1447
https://doi.org/10.1038/s41598-022-18121-y
https://doi.org/10.1038/s41598-022-18121-y
Autor:
Marcelo B, Barbosa, João Guilherme, Correia, Katharina, Lorenz, Armandina M L, Lopes, Gonçalo N P, Oliveira, Abel S, Fenta, Juliana, Schell, Ricardo, Teixeira, Emilio, Nogales, Bianchi, Méndez, Alessandro, Stroppa, João Pedro, Araújo
Publikováno v:
Scientific reports. 12(1)
Finding suitable p-type dopants, as well as reliable doping and characterization methods for the emerging wide bandgap semiconductor [Formula: see text]-[Formula: see text] could strongly influence and contribute to the development of the next genera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e094631bba29b75d0a5af4537099725c
https://pubmed.ncbi.nlm.nih.gov/36028742
https://pubmed.ncbi.nlm.nih.gov/36028742
Autor:
Daniele Vella, Marcelo B. Barbosa, Paolo E. Trevisanutto, Ivan Verzhbitskiy, Justin Yong Zhou, Kenji Watanabe, Takashi Taniguchi, Kotaro Kajikawa, Goki Eda
Publikováno v:
Advanced Optical Materials. 10:2102132
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f626fc5884d88beb4e488046b1b19e7
https://doi.org/10.1002/adom.202102132
https://doi.org/10.1002/adom.202102132