Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Marcello Colocci"'
Autor:
Lucia Cavigli, Franco Bogani, Marcello Colocci, Giovanni Baldi, Valentina Faso, Lorenzo Cortese, Anna Vinattieri
Publikováno v:
Solid State Sciences. 12:1877-1880
We present an experimental study of the radiative recombination dynamics in size-controlled TiO2 nanoparticles in the range 20–130 nm. Time-integrated photoluminescence spectra clearly show a dominance of self-trapped exciton (STE) emission, with m
Autor:
Silvia Vignolini, Marco Francardi, Massimo Gurioli, Andrea Fiore, Laurent Balet, Margherita Zani, Diederik S. Wiersma, Annamaria Gerardino, Francesco Riboli, Marcello Colocci, Anna Vinattieri, Lianhe Li, Francesca Intonti
Publikováno v:
Photonics and nanostructures
8 (2010): 78–85.
info:cnr-pdr/source/autori:Vignolini S., Intonti F., Riboli F., Zani M., Vinattieri A., Wiersma D., Colocci M., Balet L., Li LH., Francardi M., Gerardino A., Fiore A., Gurioli M./titolo:Sub-wavelength probing and modification of photonic crystal nano-cavities/doi:/rivista:Photonics and nanostructures (Print)/anno:2010/pagina_da:78/pagina_a:85/intervallo_pagine:78–85/volume:8
Photonics and Nanostructures-Fundamentals and Applications, 8(2), 78-85. Elsevier
8 (2010): 78–85.
info:cnr-pdr/source/autori:Vignolini S., Intonti F., Riboli F., Zani M., Vinattieri A., Wiersma D., Colocci M., Balet L., Li LH., Francardi M., Gerardino A., Fiore A., Gurioli M./titolo:Sub-wavelength probing and modification of photonic crystal nano-cavities/doi:/rivista:Photonics and nanostructures (Print)/anno:2010/pagina_da:78/pagina_a:85/intervallo_pagine:78–85/volume:8
Photonics and Nanostructures-Fundamentals and Applications, 8(2), 78-85. Elsevier
In this work we present a sizeable and reversible spectral tuning of the resonances of a two-dimensional photonic crystal nanocavity by exploiting the introduction of a sub-wavelength size glass tip. The comparison between experimental near-field dat
Autor:
Massimo Gurioli, R Richard Nötzel, Anna Vinattieri, Marcello Colocci, Stefano Sanguinetti, M. Zamfirescu
Publikováno v:
Physical Review B, 73(8):085302, 085302-1/6. American Physical Society
We present time-resolved photoluminescence measurements of $\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ quantum dots showing a relevant interplay between recombination kinetics and thermalization processes. By time-resolved and steady-state meas
Autor:
Diederik S. Wiersma, Sushil Mujumdar, Lorenzo Pavesi, Mher Ghulinyan, Riccardo Sapienza, Marcello Colocci
Publikováno v:
Università degli di Trento-IRIS
We discuss the optical transport properties of complex photonic structures ranging from ordered photonic crystals to disordered strongly-scattering materials, with particular focus on the intermediate regime between complete order and disorder. We st
Autor:
Francesca Rossi, Marcello Colocci, Nicola Armani, Paolo Lugli, Andrea Reale, Claudio Ferrari, Vincenzo Grillo, A. Di Carlo, Giancarlo Salviati, Anna Vinattieri
Publikováno v:
physica status solidi (c). 1:1397-1402
We present an experimental investigation of InxGa1−xN/GaN multiple quantum well structures, with well widths ranging between 10 and 40 A and an indium content 0.03 < x < 0.07. Given such values, both the electric built-in field and localization due
Autor:
Ad Lagendijk, Valentina Emiliani, Marcello Colocci, Francesca Intonti, Diederik S. Wiersma, Fouad Aliev, Maximilien Cazayous
Publikováno v:
Journal of Microscopy. 209:173-176
Two-dimensional near-field images of speckle patterns formed by optical waves transmitted through a disordered porous silica glass sample are measured. The corresponding 2D intensity correlation function, C, is extracted. The subwavelength spatial re
Autor:
Anna Vinattieri, M. Mazzoni, Giancarlo Salviati, Jean Massies, Francesca Rossi, Marcello Colocci, Nicola Armani, Miguel Angel González, Pietro Giuseppe Gucciardi, L F Sanz-Santacruz, Oscar E. Martínez, D. Alderighi
Publikováno v:
Journal of physics. Condensed matter
14 (2002): 13329–13336. doi:10.1088/0953-8984/14/48/385
info:cnr-pdr/source/autori:Salviati, G.; Martinez, O.; Mazzoni, M.; Rossi, F.; Armani, N.; Gucciardi, P.; Vinattieri, A.; Alderighi, D.; Colocci, M.; Gonzalez, M.A.; Sanz-Santacruz, L.F.; Massies, J./titolo:Optical and structural characterization of GaN%2FAlN quantum dots grown on Si(111)/doi:10.1088%2F0953-8984%2F14%2F48%2F385/rivista:Journal of physics. Condensed matter (Print)/anno:2002/pagina_da:13329/pagina_a:13336/intervallo_pagine:13329–13336/volume:14
14 (2002): 13329–13336. doi:10.1088/0953-8984/14/48/385
info:cnr-pdr/source/autori:Salviati, G.; Martinez, O.; Mazzoni, M.; Rossi, F.; Armani, N.; Gucciardi, P.; Vinattieri, A.; Alderighi, D.; Colocci, M.; Gonzalez, M.A.; Sanz-Santacruz, L.F.; Massies, J./titolo:Optical and structural characterization of GaN%2FAlN quantum dots grown on Si(111)/doi:10.1088%2F0953-8984%2F14%2F48%2F385/rivista:Journal of physics. Condensed matter (Print)/anno:2002/pagina_da:13329/pagina_a:13336/intervallo_pagine:13329–13336/volume:14
GaN/AlN-based heterostructures made from stacked GaN quantum dots (QDs) have been studied by means of the cathodoluminescence (CL), photoluminescence (PL), near-field scanning optical microscopy (NSOM) and micro-Raman techniques. The influence of the
Publikováno v:
IEEE Journal of Quantum Electronics. 38:934-937
Light propagation in disordered dielectric materials shows many similarities with electron transport. The most simple example of this is Ohm's law which has a counterpart in optics as well. We have performed optical measurements on the transmission t
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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5 páginas, 4 figuras.
GaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsi
GaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsi
Autor:
Stefano Taddei, S. Franchi, Anna Vinattieri, Stefano Sanguinetti, Massimo Gurioli, Paola Frigeri, Marcello Colocci, Emanuele Grilli, Mario Guzzi, S. Lozzia
Publikováno v:
190 (2002): 577.
info:cnr-pdr/source/autori:Gurioli M., Sanguinetti S., Lozzia S., Grilli E., Guzzi M., Frigeri P., Franchi S., Colocci M., Vinattieri A.., Taddei S./titolo:Electronic coupling effects on the optical properties and carrier dynamics of inas quantum dots/doi:/rivista:/anno:2002/pagina_da:577/pagina_a:/intervallo_pagine:577/volume:190
info:cnr-pdr/source/autori:Gurioli M., Sanguinetti S., Lozzia S., Grilli E., Guzzi M., Frigeri P., Franchi S., Colocci M., Vinattieri A.., Taddei S./titolo:Electronic coupling effects on the optical properties and carrier dynamics of inas quantum dots/doi:/rivista:/anno:2002/pagina_da:577/pagina_a:/intervallo_pagine:577/volume:190
Vertically aligned InAs/GaAs quantum dot structures were investigated. They were grown by atomic layer molecular beam epitaxy, with 10 layers and wedged spacer thickness d varying between 7.7 and 12.5 nm at steps of 0.2 nm. The effects of electronic