Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Marcello Calabrese"'
Autor:
Michael Trinczek, Nathaniel A. Dodds, Marty R. Shaneyfelt, Marcello Calabrese, Angelo Visconti, Ewart W. Blackmore, Luca Chiavarone, Simone Gerardin, J.R. Schwank, Alessandro Paccagnella, Veronique Ferlet-Cavrois, Marta Bagatin, M. Bonanomi
Publikováno v:
IEEE Transactions on Nuclear Science. 64:421-426
We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory cells. The spread in the neutral threshold voltage appears to be too low to quantitatively e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38f154b9e8b044098282796547e5cc22
https://doi.org/10.1109/tns.2016.2636830
https://doi.org/10.1109/tns.2016.2636830
Autor:
Michele Ghidotti, Andrea L. Lacaita, Alessandro S. Spinelli, Marcello Calabrese, Luca Chiavarone, Christian Monzio Compagnoni, Angelo Visconti
Publikováno v:
IEEE Transactions on Electron Devices. 57:1761-1767
This paper presents experimental evidences of the granular electron injection during channel hot-electron programming of NOR Flash memories. The statistical process ruling the discrete charge transfer from the substrate to the floating gate is shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::790d6ec498b7e1f952aca7e1a5955670
https://doi.org/10.1109/ted.2010.2050543
https://doi.org/10.1109/ted.2010.2050543
Autor:
Marta Bagatin, Veronique Ferlet-Cavrois, Angelo Visconti, Alessandro Paccagnella, Luca Chiavarone, Marcello Calabrese, Simone Gerardin, M. Bonanomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::535aa5a9b662664a11ac60b1ab22835b
http://hdl.handle.net/11577/3194064
http://hdl.handle.net/11577/3194064
Autor:
Christopher D. Frost, Simone Gerardin, Luca Chiavarone, Marcello Calabrese, Alessandro Paccagnella, Marta Bagatin, Angelo Visconti
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts are examined and mechanisms are discussed. A comparison with NAND Flash memories
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e099cba329f16fc0a1953ba1c1d6d63
https://doi.org/10.1109/irps.2014.6861094
https://doi.org/10.1109/irps.2014.6861094
Autor:
Andrea Parisi, S. Beltrami, Alessandro S. Spinelli, Christian Monzio Compagnoni, Carmine Miccoli, Marcello Calabrese, Luca Chiavarone, Angelo Visconti, Andrea L. Lacaita, Sebastiano Bartolone
Publikováno v:
ICICDT
This work is focused on the accelerated testing of Flash memory reliability, taking our 45 nm NOR technology as a case study to highlight some major issues that may affect the investigation of modern nanoscale devices. In particular, results will be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9832e21279a6cad060f5325af9598913
https://doi.org/10.1109/icicdt.2013.6563298
https://doi.org/10.1109/icicdt.2013.6563298
Autor:
Luca Chiavarone, Alessandro S. Spinelli, R. Gusmeroli, Michele Ghidotti, Andrea L. Lacaita, Christian Monzio Compagnoni, Marcello Calabrese, Angelo Visconti
This work investigates for the first time chargegranularity effects during channel hot-electron programming of NOR Flash memories, comparing the granular electron injection and the random telegraph noise limitations to the accuracy of the programming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b731c14c22d57eb34d66fc8ff4e480a
http://hdl.handle.net/11311/563149
http://hdl.handle.net/11311/563149