Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Marcel Schmeits"'
Publikováno v:
Applied Surface Science. 291:25-30
Using a custom-made numerical simulation tool, we performed a systematic study of the energy distribution of the interface trap density in a GeSn MOS structure and of their effect on the electrical characteristics such as C – V and impedance spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::524ebff483f281be63069d7994b3e88e
https://doi.org/10.1016/j.apsusc.2013.09.022
https://doi.org/10.1016/j.apsusc.2013.09.022
Autor:
Ngoc Duy Nguyen, Marcel Schmeits
Publikováno v:
physica status solidi (a). 203:1901-1914
The electrical characteristics of organic light-emitting devices are calculated for the dc and ac regimes by numerically solving the basic semiconductor equations under steady-state and small-signal conditions. For a given structure, the dc and ac el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d66b480fd963a5bfd866a30006656856
https://doi.org/10.1002/pssa.200622014
https://doi.org/10.1002/pssa.200622014
Autor:
Marcel Schmeits, Ngoc Duy Nguyen
Publikováno v:
physica status solidi (a). 202:2764-2775
The electrical characteristics of organic light emitting devices containing a continuous distribution of trap states in the forbidden gap are obtained by numerically solving the basic semiconductor equations for the steady state and under small-signa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::726835c757836a7e97b5269e21b0ef2b
https://doi.org/10.1002/pssa.200521004
https://doi.org/10.1002/pssa.200521004
Publikováno v:
physica status solidi (c). :288-292
Experimental results of electrical characterization of InGaN/GaN multiple-quantum-well electroluminescence test structures obtained by thermal admittance spectroscopy are presented. The studied GaN:Mg/5 × (InGaN/ GaN)/GaN:Si structures were grown on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516605e909ed79d6fef1fa4a3cdc6b2d
https://doi.org/10.1002/pssc.200390045
https://doi.org/10.1002/pssc.200390045
Autor:
Marcel Schmeits, Ngoc Duy Nguyen
Publikováno v:
Applied Physics B: Lasers and Optics. 74:35-42
The photorefractive effect in semiconducting materials with multiple defects is studied in the case of modulation depth m=1. The basic equations are Poisson’s equation and the continuity equations for electrons, holes and occupied defect levels. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83ca79bfa4dfcd97d45d969cd35a43fb
https://doi.org/10.1007/s003400100764
https://doi.org/10.1007/s003400100764
Publikováno v:
physica status solidi (b). 228:385-389
Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature. Evidence of two impurity levels results from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d218dcbb089db7d64d724504a86644c
https://doi.org/10.1002/1521-3951(200111)228:2<385::aid-pssb385>3.0.co
https://doi.org/10.1002/1521-3951(200111)228:2<385::aid-pssb385>3.0.co
Autor:
Ngoc Duy Nguyen, Michael Heuken, R. Evrard, Marianne Germain, Bernd Schineller, Marcel Schmeits
Publikováno v:
Journal of Crystal Growth. 230:596-601
The ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the magnesium-related level on the transport pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66436715973ee9468d169384e6adad6f
https://doi.org/10.1016/s0022-0248(01)01259-3
https://doi.org/10.1016/s0022-0248(01)01259-3
Publikováno v:
Journal of Applied Physics. 90:985-993
Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on sapphire. The analysis of the experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8980eb2fcb1022fba718955f51c81a83
https://doi.org/10.1063/1.1379345
https://doi.org/10.1063/1.1379345
Publikováno v:
Semiconductor Science and Technology. 15:341-348
Electrical conduction in semiconductor heterojunctions containing defect states in the interface region is studied. As the classical drift-diffusion mechanism cannot in any case explain electrical conduction in semiconductor heterojunctions, tunnelli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bd79c7f5dd7c8ac7123e2029d1f8ee8
https://doi.org/10.1088/0268-1242/15/4/307
https://doi.org/10.1088/0268-1242/15/4/307
Autor:
Marcel Schmeits
Publikováno v:
Journal of Applied Physics. 80:941-947
We have studied the steady‐state dc and small‐signal ac conduction in semiconductor junctions with interface dipoles. The junctions have been modeled according to the two experimental methods used to fabricate these structures. In the first metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea817de1591aa0c653c6aaf419ee21c
https://doi.org/10.1063/1.362905
https://doi.org/10.1063/1.362905