Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Marcel Lux"'
Publikováno v:
Organic Chemistry Frontiers. 6:1796-1800
A Bronsted acid catalyzed method was developed for the synthesis of γ-cyanoketones from sulfonyl cyanides, olefins and ketones. The reaction is believed to proceed via intermediate formation of alkenyl peroxides by condensation of ketones with tert-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf1d5abeb705df4e53d8c7a193eef8ea
https://doi.org/10.1039/c9qo00447e
https://doi.org/10.1039/c9qo00447e
Autor:
Guy Vereecke, Jonas Baeyens, Christina Baerts, Herbert Struyf, Marcel Lux, Els Kesters, Denis Shamiryan, Joris Pittevils
Publikováno v:
Solid State Phenomena. 187:219-222
All-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom AntiReflective Coating (BARC) in the back-end-of-line (BEOL) semiconductor manufacturing, as plasma ash, traditionally used to remove the PR and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50cfc9ef08f6cfee98535eb80afa16ef
https://doi.org/10.4028/www.scientific.net/ssp.187.219
https://doi.org/10.4028/www.scientific.net/ssp.187.219
Autor:
Herbert Struyf, Guy Vereecke, Quoc Toan Le, Stefan De Gendt, Martine Claes, Tae-Gon Kim, Marc Heyns, Marcel Lux, Samuel Suhard, Paul Mertens
Publikováno v:
Solid State Phenomena. 187:197-200
Atomic force microscope (AFM) with inclined sample measurement and hydrophobic functionalized AFM probe was used to visualize the sidewall of low-k pattern and allowed to characterize the hydrophobic characteristics on the sidewall after low-k etch.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a907d4f0ac211ec15d197708b17bcd
https://doi.org/10.4028/www.scientific.net/ssp.187.197
https://doi.org/10.4028/www.scientific.net/ssp.187.197
Autor:
J. Pittevils, G. Vereecke, Els Kesters, S. De Gendt, Quoc Toan Le, Marcel Lux, Herbert Struyf
Publikováno v:
Journal of The Electrochemical Society. 159:D287-D295
All-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom Anti Reflective Coating (BARC) in the Back-End-Of-Line (BEOL) semiconductor manufacturing, as an alternative to plasma strip, which may cause da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e490b5869b3b0509e1cdfa96fd6aa45e
https://doi.org/10.1149/2.040205jes
https://doi.org/10.1149/2.040205jes
Publikováno v:
ECS Transactions. 41:269-276
Conventional plasma strip processes are prone to cause damage to advanced porous low-k materials. Therefore, all-wet processes are gaining a renewed interest for the removal of post-etch photoresist (PR) and Bottom Anti Reflective Coating (BARC) in B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df5ec9a0b04675c265d21a0125b9a24
https://doi.org/10.1149/1.3630854
https://doi.org/10.1149/1.3630854
Publikováno v:
ECS Transactions. 25:173-178
Wet removal of post-etch photoresist (PR) and bottom anti-reflective coating (BARC) was studied using "multi functional" cleaning solutions based on BASFs tool box. For blanket wafer, Fourier-transform infrared (FTIR) data showed that both PR and BAR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4bf4351ffd8311f1fa104a32209246d
https://doi.org/10.1149/1.3202650
https://doi.org/10.1149/1.3202650
Publikováno v:
ECS Transactions. 25:71-77
This study focused on the removal of post-etch photoresist (PR) and bottom anti-reflection coating (BARC) layers using O3 dissolved in H2O at 60 {degree sign}C. A complete removal of the PR layer was achieved with a short rinse in propylene carbonate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78711ce3ce6c5ae6f89ab849111b5107
https://doi.org/10.1149/1.3202637
https://doi.org/10.1149/1.3202637
Publikováno v:
Solid State Phenomena. :323-326
In Back-End-of-Line processing, the remaining photoresist layer after plasma etch is traditionally removed using a plasma process. Plasma process was reported to induce damage to porous dielectric [1-3]. To minimize damage to low-k material, wet alte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679b59105b953a19da7157e2517b8e9a
https://doi.org/10.4028/www.scientific.net/ssp.145-146.323
https://doi.org/10.4028/www.scientific.net/ssp.145-146.323
Autor:
Nicolo Chiodarelli, Quoc Toan Le, Martine Claes, Guy Vereecke, Johan Keldermans, Els Kesters, Marcel Lux
Publikováno v:
Japanese Journal of Applied Physics. 47:6870-6874
Dry ashing of photoresist (PR) using oxygen-containing plasma applied subsequently to an etch plasma leads to degradation of porous low-k material. The surface region is substantially depleted in carbon. The low-k film becomes more hydrophilic after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ebbafe66c5aea09ee8af75fbc61abd
https://doi.org/10.1143/jjap.47.6870
https://doi.org/10.1143/jjap.47.6870
Autor:
Robert Carleer, Marcel Lux, Dirk Vanderzande, Paul Mertens, Quoc Toan Le, Guy Vereecke, J. Keldermans, Els Kesters, M.M. Frank, Peter Adriaensens, Martine Claes, Alexis Franquet
Publikováno v:
Solid State Phenomena. 134:325-328
[Claes, M.; Le, Q. T.; Kesters, E.; Lux, M.; Franquet, A.; Vereecke, G.; Mertens, P. W.] IMEC VZW, B-3001 Louvain, Belgium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ccd7685b3b086d4c43e47e11b219a7
https://doi.org/10.4028/www.scientific.net/ssp.134.325
https://doi.org/10.4028/www.scientific.net/ssp.134.325