Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Marcel Hendrikus Maria Beems"'
Autor:
Igor Bouchoms, Stefan Weichselbaum, Pieter Gunter, Jan Jaap Kuit, Martijn Leenders, Rob van Ballegoij, Bart Dinand Paarhuis, Marcel Hendrikus Maria Beems, Roelof de Graaf, Martin Verhoeven, Robert Kazinczi
Publikováno v:
SPIE Proceedings.
Mainstream high-end lithography is currently focusing on 32 nm node and 22 nm node where 1.35 NA immersion technology is well established for the most critical layers. Double-patterning and spacer-patterning techniques have been developed and are bei
Autor:
Jo Finders, Hans Van Der Laan, Michael Kubis, Jan Mulkens, Marcel Hendrikus Maria Beems, Paul Christiaan Hinnen
Publikováno v:
SPIE Proceedings.
Immersion lithography is being extended to 22-nm and even below. Next to generic scanner system improvements, application specific solutions are needed to follow the requirements for CD control and overlay. Starting from the performance budgets, this
Autor:
Peter Engblom, Jo Finders, Toralf Gruner, Marcel Hendrikus Maria Beems, Jan Mulkens, Youping Zhang, Hans Bakker, Thijs Hollink, Rob Willekers, Alena Andryzhyieuskaya, Angelique Nachtwein, Frank Staals
Publikováno v:
SPIE Proceedings.
In this paper we describe the basic principle of FlexWave, a new high resolution wavefront manipulator, and discuss experimental data on imaging, focus and overlay. For this we integrated the FlexWave module in a 1.35 NA immersion scanner. With FlexW
Autor:
Erwin Verdurmen, Roelof de Graaf, Igor Bouchoms, Jan Mulkens, Marcel Hendrikus Maria Beems, Frank Bornebroek, Nils Dieckmann, Pieter Gunter, Hans Jasper, Sander de Putter
Publikováno v:
SPIE Proceedings.
The semiconductor industry has adopted water-based immersion technology as the mainstream high-end litho enabler for 5x-nm and 4x-nm devices. Exposure systems with a maximum lens NA of 1.35 have been used in volume production since 2007, and today ac