Zobrazeno 1 - 10
of 448
pro vyhledávání: '"Marcel A, Verheijen"'
Autor:
Marvin A. J. van Tilburg, Riccardo Farina, Victor T. van Lange, Wouter H. J. Peeters, Steffen Meder, Marvin M. Jansen, Marcel A. Verheijen, M. Vettori, Jonathan J. Finley, Erik. P. A. M. Bakkers, Jos. E. M. Haverkort
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-8 (2024)
Abstract Hexagonal crystal phase silicon-germanium (hex-SiGe) features efficient direct bandgap emission between 1.5 and 3.4 µm. For expanding its application potential, the key challenge is to demonstrate material gain for enabling a hex-SiGe semic
Externí odkaz:
https://doaj.org/article/b30a757cf6f64c05976a51a3e4be79b8
Autor:
Wouter H. J. Peeters, Victor T. van Lange, Abderrezak Belabbes, Max C. van Hemert, Marvin Marco Jansen, Riccardo Farina, Marvin A. J. van Tilburg, Marcel A. Verheijen, Silvana Botti, Friedhelm Bechstedt, Jos. E. M. Haverkort, Erik P. A. M. Bakkers
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Silicon is indisputably the most advanced material for scalable electronics, but it is a poor choice as a light source for photonic applications, due to its indirect band gap. The recently developed hexagonal Si1−x Ge x semiconductor featu
Externí odkaz:
https://doaj.org/article/61bafcf74a8a48459f1e085284adae99
Autor:
Lior Shani, Pim Lueb, Gavin Menning, Mohit Gupta, Colin Riggert, Tyler Littmann, Frey Hackbarth, Marco Rossi, Jason Jung, Ghada Badawy, Marcel A Verheijen, Paul A Crowell, Erik P A M Bakkers, Vlad S Pribiag
Publikováno v:
Materials for Quantum Technology, Vol 4, Iss 1, p 015101 (2024)
Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum t
Externí odkaz:
https://doaj.org/article/328883758b7746c98d444f895e6f1689
Autor:
Johanna (Sanne) H. Deijkers, Arthur A. deJong, Miika J. Mattinen, Jeff J. P. M. Schulpen, Marcel A. Verheijen, Hessel Sprey, Jan Willem Maes, Wilhelmus (Erwin) M. M. Kessels, Ageeth A. Bol, Adriaan J. M. Mackus
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 12, Pp n/a-n/a (2023)
Abstract Miniaturization in integrated circuits requires that the Cu diffusion barriers located in interconnects between the Cu metal line and the dielectric material should scale down. Replacing the conventional TaN with a 2D transition metal dichal
Externí odkaz:
https://doaj.org/article/cf0691abe86647728518a52e4199b94c
Autor:
Ghada Badawy, Bomin Zhang, Tomáš Rauch, Jamo Momand, Sebastian Koelling, Jason Jung, Sasa Gazibegovic, Oussama Moutanabbir, Bart J. Kooi, Silvana Botti, Marcel A. Verheijen, Sergey M. Frolov, Erik P. A. M. Bakkers
Publikováno v:
Advanced Science, Vol 9, Iss 12, Pp n/a-n/a (2022)
Abstract Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin‐orbit interaction and large Landé g‐factor. Integrating InSb nanowires with other materials coul
Externí odkaz:
https://doaj.org/article/e15e4b4469ce45f3a55d720c7daab8a8
Autor:
Rochan Sinha, Reinoud Lavrijsen, Marcel A. Verheijen, Erwin Zoethout, Han Genuit, Mauritius C. M. van de Sanden, Anja Bieberle-Hütter
Publikováno v:
ACS Omega, Vol 4, Iss 5, Pp 9262-9270 (2019)
Externí odkaz:
https://doaj.org/article/863c87c1ab5f4c6a9e08de0dd8f16e12
Autor:
Francesc Sastre, Caroline Versluis, Nicole Meulendijks, Jessica Rodríguez-Fernández, Jorgen Sweelssen, Ken Elen, Marlies K. Van Bael, Tim den Hartog, Marcel A. Verheijen, Pascal Buskens
Publikováno v:
ACS Omega, Vol 4, Iss 4, Pp 7369-7377 (2019)
Externí odkaz:
https://doaj.org/article/b39a171f7d354cc1aa37e7429c76e422
Autor:
Mengyan Li, Johannes Ihli, Marcel A. Verheijen, Mirko Holler, Manuel Guizar-Sicairos, Jeroen A. van Bokhoven, Emiel J. M. Hensen, Thomas Weber
Publikováno v:
Journal of Physical Chemistry C, 126(43), 18536-18549. American Chemical Society
The Journal of Physical Chemistry C, 126 (43)
The Journal of Physical Chemistry C, 126 (43)
Preparation conditions have a vital effect on the structure of alumina-supported hydrodesulfurization (HDS) catalysts. To explore this effect, we prepared two NiMoS/Al2O3 catalyst samples with the same target composition using different chemical sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61584c23a219350c3f25006e8aa8ccab
https://doi.org/10.1021/acs.jpcc.2c05927
https://doi.org/10.1021/acs.jpcc.2c05927
Autor:
Lavinia Calvi, Ryan van Zandvoort, Luc Leufkens, Janique F.B. Hupperetz, Roberto Habets, Daniel Mann, Nicole Meulendijks, Marcel A. Verheijen, Ken Elen, An Hardy, Marlies K. Van Bael, Pascal Buskens
Publikováno v:
Solar Energy Materials and Solar Cells, 257:112350. Elsevier
The switching performance of W/VO2 nanoparticles in thermochromic glass laminates was investigated. W/VO2 powder was prepared, and displayed a phase transition temperature and switching enthalpy of 20.9 degrees C and 37.5 +/- 0.2 J g- 1, respectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::819263c9c996b55725f90469b8cc5d07
https://doi.org/10.1016/j.solmat.2023.112350
https://doi.org/10.1016/j.solmat.2023.112350
Autor:
Marco Rossi, Ghada Badawy, Zhi‐Yuan Zhang, Guang Yang, Guo‐An Li, Jia‐Yu Shi, Roy L. M. Op het Veld, Sasa Gazibegovic, Lu Li, Jie Shen, Marcel A. Verheijen, Erik P. A. M. Bakkers
Publikováno v:
Advanced Functional Materials, 33(17):2212029. Wiley-VCH Verlag
Indium Antimonide (InSb) is a semiconductor material with unique properties, that are suitable for studying new quantum phenomena in hybrid semiconductor-superconductor devices. The realization of such devices with defect-free InSb thin films is chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9885e7a39b3207b353cef941a42100e
https://research.tue.nl/nl/publications/99d9f92a-7b03-4468-b99e-a545e3e75cf4
https://research.tue.nl/nl/publications/99d9f92a-7b03-4468-b99e-a545e3e75cf4
