Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Marcel, Freddy"'
Autor:
Straka, Jason R., Antoine, Archie, Bruno, Rene, Campbell, David, Campbell, Ron, Campbell, Ross, Cardinal, John, Gibot, Gerald, Gray, Queenie Z., Irwin, Sharon, Kindopp, Rhona, Ladouceur, Ray, Ladouceur, Walter, Lankshear, Jessica, Maclean, Bruce, Macmillan, Stuart, Marcel, Freddy, Marten, George, Marten, Larry, McKinnon, John, Patterson, Lucy D., Voyageur, Charlie, Voyageur, Morgan, Whiteknife, George "Sloan", Wiltzen, Leslie
Publikováno v:
Arctic, 2018 Jun 01. 71(2), 218-228.
Externí odkaz:
https://www.jstor.org/stable/26478016
Publikováno v:
Extended Abstracts of the 1976 International Conference on Solid State Devices.
In recent years many attempts have been made to use the outstanding properties of GaAs for microwave devices such as Schottky diodes, FET's and transferred electron devices, especially in integrated circuits. Usually n-type layers ("active" layers) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e94c08bcac7b25b12b0755a599e5c38
https://doi.org/10.7567/ssdm.1976.b-1-6
https://doi.org/10.7567/ssdm.1976.b-1-6
Autor:
Steiner, Klaus, Schmitt, R., Zuleeg, R., Kaufmann, Leon Marcel Freddy, Heime, Klaus, Kuphal, Eckart, Wolter, Joachim H.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=unidue___bib::1b86385b4c689d66261682d8e565b9f9
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=46149128684
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=46149128684
Autor:
Schmitt, R., Steiner, Klaus, Kaufmann, Leon Marcel Freddy, Brockerhoff, Wolfgang, Heime, Klaus, Kuphal, Eckart
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=unidue___bib::ab75adeaaffd6e9e1dc90b17c22e0500
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0023016873
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=0023016873
Publikováno v:
Japanese Journal of Applied Physics. 16:107
In recent years many attempts have been made to use the outstanding properties of GaAs for microwave devices such as Schottky diodes, FET's and transferred electron devices, especially in integrated circuits. Usually n-type layers ("active" layers) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aeb7d1beed0d4bb4be51ef4b5c99c601
https://doi.org/10.7567/jjaps.16s1.107
https://doi.org/10.7567/jjaps.16s1.107
Publikováno v:
Japanese Journal of Applied Physics; January 1977, Vol. 16 Issue: 1 p107-107, 1p