Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Marc Schouten"'
Publikováno v:
Solar Energy Materials and Solar Cells. 173:6-11
Measuring the external quantum efficiency (EQE) of a solar cell is a standard method to gain deeper insights into its opto-electrical properties. For the case of crystalline silicon solar cells, the EQE of a solar cell is often used to assess the qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95abbba0da61af3aa64a14cb60bec4e7
https://doi.org/10.1016/j.solmat.2017.07.007
https://doi.org/10.1016/j.solmat.2017.07.007
Autor:
Bart Macco, Miro Zeman, Arno H. M. Smets, H. Schut, Stephan W. H. Eijt, A. Mannheim, Marc Schouten, Albert S. Vullers, Jimmy Melskens
Publikováno v:
IEEE Journal of Photovoltaics, 7(2):7828138, 421-429. IEEE Electron Devices Society
IEEE Journal of Photovoltaics, 7(2)
IEEE Journal of Photovoltaics, 7(2)
The nanostructure of hydrogenated amorphous silicon (a-Si:H) is studied by means of doppler broadening positron annihilation spectroscopy (DB-PAS) and Fourier transform infrared (FTIR) spectroscopy. The evolution of open volume deficiencies is monito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82cb05d943ff965cfbcc22694625a03b
https://research.tue.nl/nl/publications/ee0bc411-a550-4790-bde6-3785a3e713c8
https://research.tue.nl/nl/publications/ee0bc411-a550-4790-bde6-3785a3e713c8
Autor:
Miro Zeman, Arno H. M. Smets, Takuya Matsui, Marc Schouten, H. Schut, Albert S. Vullers, Jimmy Melskens, Yalda Mohammadian, Stephan W. H. Eijt, A. Mannheim
Publikováno v:
IEEE Journal of Photovoltaics. 4:1331-1336
The nature and the kinetics of light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) films and so- lar cells are investigated by means of Doppler broadening positron annihilation spectroscopy, Fourier transform photocurrent spec- t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13fb5357b3be6959b9d4076ad676e26f
https://doi.org/10.1109/jphotov.2014.2349655
https://doi.org/10.1109/jphotov.2014.2349655
Autor:
Marinus Fischer, Miro Zeman, Ravi Vasudevan, D.J. van der Vlies, Valeria Demontis, Jimmy Melskens, Arno H. M. Smets, Marc Schouten, S.G.M. Heirman, Rudi Santbergen, Klaus Jäger, Robin J. V. Quax
Publikováno v:
Solar Energy Materials and Solar Cells. 129:70-81
A profound comprehension of the nanostructure of hydrogenated amorphous silicon (a-Si:H) and the defect states in this material is currently still lacking despite several decades of research on this topic. Investigating the nature of defects in a-Si:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a92069b1e3dcb44899af3bd0aced0934
https://doi.org/10.1016/j.solmat.2014.03.022
https://doi.org/10.1016/j.solmat.2014.03.022
Publikováno v:
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2.
Temperature annealing is used as a tool to study the validity of network models for the nanostructure of hydrogenated amorphous silicon (a-Si:H) and its relation to defect states. The changes in the size of the dominant open volume deficiencies have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50753e2e98c202b3d8bccd891efda4c1
https://doi.org/10.1109/pvsc-vol2.2013.6656760
https://doi.org/10.1109/pvsc-vol2.2013.6656760