Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Marc Schaepkens"'
Autor:
Jie Liu, Marc Schaepkens, Matthew A. Pellow, Min Yan, Paul Alan Mcconnelee, Donald Franklin Foust, Thomas Paul Feist, Tae Won Kim, Christian Maria Anton Heller, Anil Raj Duggal, Ahmet Gun Erlat
Publikováno v:
Proceedings of the IEEE. 93:1468-1477
The use of plastic film substrates for organic electronic devices promises to enable new applications, such as flexible displays and conformal lighting, and a new low-cost paradigm through high-volume roll-to-roll fabrication. Unfortunately, presentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67da4ea5f341b372a8dc7ee4d8c76f47
https://doi.org/10.1109/jproc.2005.851483
https://doi.org/10.1109/jproc.2005.851483
Autor:
Anil Raj Duggal, Marc Schaepkens, Tae Won Kim, Min Yan, John Deluca, Ahmet Gun Erlat, Mathew Pellow, Paul Alan Mcconnelee, Thomas Paul Feist
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:971-977
We have developed a coating technology to reduce the moisture permeation rate through a polycarbonate plastic film substrate to below 1×10−5g∕m2∕day using plasma-enhanced chemical vapor deposition. Unlike other ultrahigh barrier (UHB) coatings
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf799442cd5ff09cdbd2405b17b200a
https://doi.org/10.1116/1.1913680
https://doi.org/10.1116/1.1913680
Autor:
Ahmet Gun Erlat, Marc Schaepkens, Christian Maria Anton Heller, Kevin Warner Flanagan, Min Yan, Tae Won Kim, Paul Alan Mcconnelee
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:1716-1722
The use of polycarbonate film substrates enables fabrication of applications, such as flexible display devices, lighting devices, and other flexible electro-optical devices, using low cost, roll-to-roll fabrication technologies. One of the limitation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3659ace8c952f850979ce53027d632ab
https://doi.org/10.1116/1.1705646
https://doi.org/10.1116/1.1705646
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1971-1977
A quadrupole mass spectrometer equipped with a special sampling tube and positioned on a linear-motion table is shown to be capable of obtaining important information on the variation of the discharge properties with position. We measured signals obt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99186cf1bd1945fc1cd38a5b6e9927f3
https://doi.org/10.1116/1.1619413
https://doi.org/10.1116/1.1619413
Autor:
Louis C. Frees, Marc Schaepkens, Norbert Mueller, Xi Li, Norman Korner, Robert E. Ellefson, Gottlieb S. Oehrlein
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2438-2446
Positive ions and radicals in C2F6 and CHF3 high density discharges were measured using a direct-line-of-sight mass spectrometer. The ion energy distributions of the dominant ions were measured as a function of process conditions. Appearance potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::518d8b9ae46bd882916a6c3e4db1c065
https://doi.org/10.1116/1.581980
https://doi.org/10.1116/1.581980
Publikováno v:
Scopus-Elsevier
In the fabrication of microstructures in SiO2, etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ac968c55fd67a69f4aa26a0b8d3bb3
https://doi.org/10.1116/1.581534
https://doi.org/10.1116/1.581534
Autor:
Marc Schaepkens, Gottlieb S. Oehrlein
Publikováno v:
ChemInform. 32
A comprehensive overview of results from mechanistic studies on plasma-surface interactions in inductively coupled fluorocarbon plasmas, which are currently widely used for the SiO 2 etching process in semiconductor device manufacturing industry, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76b1acd11ba6be8263e03455b85e37f
https://doi.org/10.1002/chin.200126238
https://doi.org/10.1002/chin.200126238
Autor:
Gottlieb S. Oehrlein, Marc Schaepkens
Publikováno v:
Applied Physics Letters. 72:1293-1295
When fabricating microscopic features in SiO2 layers using low pressure, high-density fluorocarbon plasmas, microtrenching has commonly been observed. Microtrenching has been explained either as due to ion scattering from sloped sidewalls or negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86378757276ea2f045dcab1a200f8be9
https://doi.org/10.1063/1.121068
https://doi.org/10.1063/1.121068
Autor:
M Marc Schaepkens, RJ René Severens, van de Mcm Richard Sanden, Hjm Eric Verhoeven, DC Daan Schram
Publikováno v:
Review of Scientific Instruments, 67(10), 3624-3626. American Institute of Physics
A method to determine the electrical conductance of thin films such as a‐Si:H that does not require contacting electrodes is presented. This method, introduced by Sommer and Tanner, is based on measuring the phase shift of a capacitive transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af3fef7df366d6c15a15311b339494b5
https://doi.org/10.1063/1.1147125
https://doi.org/10.1063/1.1147125
Autor:
DC Daan Schram, M Marc Schaepkens, van de Mcm Richard Sanden, Gjh Seth Brussaard, Kgy Karine Letourneur
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:61
Photoresist is etched using a remote thermal (cascaded arc) plasma in Ar/O2 and Ar/O2N2 mixtures. Very high etch rates, up to 200 nm/s, are achieved at low substrate temperatures (350 K) and low electron and ion temperatures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3367e3fa2e2638f228480cfe12ba07b
https://doi.org/10.1116/1.1532021
https://doi.org/10.1116/1.1532021