On the Aging of OTFTs and Its Impact on PUFs Reliability

Autor: Marc Porti, Gerard Palau, Albert Crespo-Yepes, August Arnal Rus, Simon Ogier, Eloi Ramon, Montserrat Nafria

Publikováno v: Micromachines, Vol 15, Iss 4, p 443 (2024)

Given the current maturity of printed technologies, Organic Thin-Film Transistors (OTFT) still show high initial variability, which can be beneficial for its exploitation in security applications. In this work, the process-related variability and agi

Externí odkaz: https://doaj.org/article/f135aef7506f4cc9b817766e580d436c

A Smart Measurement System for the Combined Nanoscale and Device Level Characterization of Electron Devices: Implementation Using Ink-Jet Printing Technologies

Autor: Sergi Claramunt, Javier Arrese, Ana Ruiz, Marc Porti, Albert Cirera, Montserrat Nafria

Publikováno v: IEEE Transactions on Nanotechnology. 22:28-35

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82cc0969a68a7b6f816ec562508b79b5
https://doi.org/10.1109/tnano.2023.3234357

Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

Autor: K. Zhang, Xavier Aymerich, Günther Benstetter, Z. Y. Shen, Mario Lanza, V. Iglesias, Marc Porti, Montserrat Nafria, Gennadi Bersuker, A. Bayerl

Publikováno v: Recercat: Dipósit de la Recerca de Catalunya
Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Recercat. Dipósit de la Recerca de Catalunya
instname
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2049c7a4f9fe3426c55a54b67eaff67
http://hdl.handle.net/2072/402358

Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties

Autor: M. Nafria, Marc Porti, A. Crespo-Yepes, S. Claramunt, H. Xu, A. Ruiz, Qian Wu, C. Liu

Publikováno v: Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona

Two different Kelvin Probe Force Microscopy (KPFM) measurement configurations have been combined to evaluate at the nanoscale the effects of an electrical stress on Organic Thin Film Transistors (OTFTs) properties. As an example, Channel Hot Carrier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d976302ec12703fd835551821512859
https://ddd.uab.cat/record/248842

Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Autor: Javier Martin-Martinez, Montserrat Nafria, Marc Porti, C. Couso

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 55-62 (2018)

Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c6632282967e202dac620e3eb76707e
https://ieeexplore.ieee.org/document/8102997/