Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Marc Noot"'
Autor:
Jungmin Lee, Doogyu Lee, Eunji Lee, Inbeom Yim, Jeongjin Lee, Seung Yoon Lee, Chan Hwang, Marc Noot, Arno J. van Leest, Simon G. J. Mathijssen, Yao Gao, Seung-Bin Yang, Mi-Yeon Baek, Do-Haeng Lee, Han-Gyeol Park, Jong-Hyuk Yim, Thomas Kim, Ho-Hyuk Lee, Kemal Dahha, Stefan N. Smith-Meerman, Koen van Witteveen, Elliott McNamara, Matthew McLaren
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a615ca4fc836a6d74b3192dd259fc1d
https://doi.org/10.1117/12.2658330
https://doi.org/10.1117/12.2658330
Autor:
Farzad Farhadzadeh, Elliott Mc Namara, Wenkang Song, Eason Su, Hongwei Zhu, Jing Wang, Marc Noot, Simon Gijsbert Josephus Mathijssen, Longfei Shen, Kaustuve Bhattacharyya, Ji-Ling Hou, Jie Du, Yu Liu, Sheng-Tsung Tsao, Sunny Xia, Chia-Hung Chen, Kimi Yang, David Xu, Zhi-Qiang Tang, Herman Heijmerikx, Xing Ma
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Advancing technology nodes in DRAM continues to drive the reduction of on-product overlay (OV) budget. This gives rise to the need for OV metrology with greater accuracy. However, the ever increasing process complexity brings additional challenges re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c178b074d8120e4e84f788648687517
https://doi.org/10.1117/12.2583818
https://doi.org/10.1117/12.2583818
Autor:
Arie Jeffrey Den Boef, Justin Huang, Jeff Lin, Frank Sun, Matthew McLaren, Edison Wang, Farzad Farhadzadeh, Momo Lin, Kaustuve Bhattacharyya, Wilson Liu, Jason Hung, Marc Noot, Benny Gosali, Ken Chang, Cathy Wang, Sax Liao, Simon Gijsbert Josephus Mathijssen
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
An after etch overlay measurement on device is typically used as a reference overlay as this is what determines the final overlay. The delta between on target overlay from after develop (ADI) and this reference overlay on device after etch (AEI) is k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8981325562d805f21c4d5d02db2a3ad5
https://doi.org/10.1117/12.2583861
https://doi.org/10.1117/12.2583861
Autor:
Herman Heijmerikx, Longfei Shen, Farzad Farhadzadeh, Kaustuve Bhattacharyya, Huajun Qin, Yaobin Feng, Lineke van der Sneppen, Fei Jia, Arie Jeffrey Den Boef, Elliott Mc Namara, Jolly Xu, Chao Fang, Simon Gijsbert Josephus Mathijssen, Marc Noot
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Metrology requirements at advanced nodes are not only tightening on specifications but also broadening in terms of flexibility needed to cover variety of product stacks. Metrology targets need to be process compatible and at the same time these targe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd7422033c8ddfaeae36cd9547b18164
https://doi.org/10.1117/12.2551899
https://doi.org/10.1117/12.2551899
Autor:
Se-Ra Jeon, Chan Hwang, Jeongijn Lee, Arie Jeffrey Den Boef, Seung-Bin Yang, Woo-young Jung, Seung Yoon Lee, Farzad Farhadzadeh, Simon Gijsbert Josephus Mathijssen, Daniel Park, Jinsun Kim, Won-Jae Jang, Joon-Soo Park, Marc Noot, Kaustubh Padhye, Oh-Sung Kwon, Kaustuve Bhattacharyya
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
In multi patterning processes, overlay is now entangled with CD including OPC and stochastics. This combined effect is a serious challenge for continued shrink and is driving down the allowed overlay margin to an unprecedented level. We need to do ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e808e901e4b35035acb96b03435966a
https://doi.org/10.1117/12.2551676
https://doi.org/10.1117/12.2551676
Autor:
Narjes Javaheri, John Lin, Benny Gosali, Antonios Zagaris, Ken Chang, Eason Su, Cathy Wang, Murat Bozkurt, Guo-Tsai Huang, Simon Gijsbert Josephus Mathijssen, Arie Jeffrey Den Boef, Kai-Hsiung Chen, Marc Noot, Kaustuve Bhattacharyya, Reza Hajiahmadi
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
The on-product overlay roadmap demands an aggressive overlay requirement in the advanced node. Currently the on-product overlay is dominated by effects coming from wafer processing and overlay target detectability. Processing effects such as symmetri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb515be9ff892937a282a1198ad851c8
https://doi.org/10.1117/12.2514949
https://doi.org/10.1117/12.2514949
Autor:
Guo-Tsai Huang, John Lin, Christophe Fouquet, Kevin Cheng, Eason Su, Arie Jeffrey Den Boef, Benny Gosali, Ken Chang, Marc Noot, Kai-Hsiung Chen, Kaustuve Bhattacharyya, Hammer Chang, Cathy Wang, Sax Liao
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
Success of diffraction-based overlay (DBO) technique1,4,5 in the industry is not just for its good precision and low toolinduced shift, but also for the measurement accuracy2 and robustness that DBO can provide. Significant efforts are put in to capi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a366300caed91b796a49c3d6f8ee711
https://doi.org/10.1117/12.2297420
https://doi.org/10.1117/12.2297420
Autor:
Martin Jacobus Johan Jak, Andreas Fuchs, Kevin Cheng, Grzegorz Grzela, L. G. Terng, Wilson Tzeng, Christophe Fouquet, Marc Noot, Guo-Tsai Huang, Ken Chang, Y. C. Wang, Eason Su, Omer Adam, Arie Jeffrey Den Boef, Chih-Ming Ke, Kai-Hsiung Chen, Cathy Wang, Sax Liao, Vincent Couraudon, Kaustuve Bhattacharyya
Publikováno v:
SPIE Proceedings.
The optical coupling between gratings in diffraction-based overlay triggers a swing-curve1,6 like response of the target’s signal contrast and overlay sensitivity through measurement wavelengths and polarizations. This means there are distinct meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3ddbb2f8940f861ad1198f216fa88b
https://doi.org/10.1117/12.2257662
https://doi.org/10.1117/12.2257662
Autor:
Marc Noot, Elliott McNamara, Chan Hwang, Kaustuve Bhattacharyya, Seung Yoon Lee, Frank van de Mast, Nang-Lyeom Oh, Se-Ra Jeon, Joost van Heijst, Noh-Kyoung Park, Arie Jeffrey Den Boef, Kun-tack Lee, Kevin An, SeungHwa Oh, Greet Storms
Publikováno v:
SPIE Proceedings.
With the increase of process complexity in advanced nodes, the requirements of process robustness in overlay metrology continues to tighten. Especially with the introduction of newer materials in the film-stack along with typical stack variations (th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd0e3530c1f43ec58e9259ce2f607b1
https://doi.org/10.1117/12.2222040
https://doi.org/10.1117/12.2222040
Autor:
David Bolton, Ben F. Noyes, Kevin Park, Marc Kea, Marc Noot, Babak Mokaberi, Ashwin Palande, Chen Li
Publikováno v:
SPIE Proceedings.
The integration of on-product diffraction-based focus (DBF) capability into the majority of immersion lithography layers in leading edge logic manufacturing has enabled new applications targeted towards improving cycle time and yield. A CD-based dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c558587233f6cffc07c812e4fef6d66
https://doi.org/10.1117/12.2219303
https://doi.org/10.1117/12.2219303