Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Marc Jaikissoon"'
Autor:
Joel Martis, Sandhya Susarla, Archith Rayabharam, Cong Su, Timothy Paule, Philipp Pelz, Cassandra Huff, Xintong Xu, Hao-Kun Li, Marc Jaikissoon, Victoria Chen, Eric Pop, Krishna Saraswat, Alex Zettl, Narayana R. Aluru, Ramamoorthy Ramesh, Peter Ercius, Arun Majumdar
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Four-dimensional scanning transmission electron microscopy (4D-STEM) has recently gained widespread attention for its ability to image atomic electric fields with sub-Ångstrom spatial resolution. These electric field maps represent the inte
Externí odkaz:
https://doaj.org/article/4a106ab2b36f4ca59ca8339102c9b4c3
Autor:
Alwin Daus, Marc Jaikissoon, Asir Intisar Khan, Aravindh Kumar, Ryan W. Grady, Krishna C. Saraswat, Eric Pop
Publikováno v:
Nano Letters. 22:6135-6140
Real-time thermal sensing on flexible substrates could enable a plethora of new applications. However, achieving fast, sub-millisecond response times even in a single sensor is difficult, due to the thermal mass of the sensor and encapsulation. Here,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1ecd20e08d28e47b2dec9702f831228
https://doi.org/10.1021/acs.nanolett.2c01344
https://doi.org/10.1021/acs.nanolett.2c01344
Publikováno v:
2022 Device Research Conference (DRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2201ad965d530fe84c4c197533535b3e
https://doi.org/10.1109/drc55272.2022.9855790
https://doi.org/10.1109/drc55272.2022.9855790
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::344d56274e54605b3b6e71f01e15d618
http://arxiv.org/abs/2109.01927
http://arxiv.org/abs/2109.01927
Autor:
Paul C. McIntyre, Ann F. Marshall, Michael R. Braun, Anahita Pakzad, Andrew C. Meng, Krishna C. Saraswat, Junkyo Suh, Taeho R. Kim, Marc Jaikissoon
Publikováno v:
DRC
Incorporating high mobility material in channel and 3D stacking channels in a multigate device can enable next-generation high-performance CMOS technology [1], [2]. Ge is a potential channel material due to its superior carrier mobility and light eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df575bcaa2e4c36c41112ced5a1b9dc6
https://doi.org/10.1109/drc46940.2019.9046465
https://doi.org/10.1109/drc46940.2019.9046465
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:02B102
An integrated spectral pyrometry (ISP) technique particularly well suited to monitor the temperature of small bandgap semiconductors during molecular beam epitaxial growth is proposed. The technique relies on integrating the thermal radiation power e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c02d730973bb173e017ac7067c2aea
https://doi.org/10.1116/1.4975926
https://doi.org/10.1116/1.4975926