Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Marc J. M. Merkx"'
Autor:
Adriaan J. M. Mackus, Wilhelmus M. M. Kessels, Marc J. M. Merkx, Jiaming Cai, Yao Jing, Rong Chen, Kun Cao
Publikováno v:
ACS Applied Materials & Interfaces, 12(47), 53519-53527. American Chemical Society
Photoluminescence perovskite nanocrystals (NCs) have shown significant potential in optoelectronic applications in view of their narrow band emission with high photoluminescence quantum yields and color tunability. The main obstacle for practical app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d013466d13107003b7ed78a61061e3b
http://www.scopus.com/inward/record.url?scp=85096668803&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85096668803&partnerID=8YFLogxK
Autor:
Wilhelmus M. M. Kessels, Dennis M. Hausmann, Adriaan J. M. Mackus, Marc J. M. Merkx, Tania E. Sandoval
Publikováno v:
Chemistry of Materials, 32(8), 3335-3345. American Chemical Society
Area-selective atomic layer deposition (ALD) is currently attracting significant interest as a solution to the current challenges in alignment that limit the development of sub-5 nm technology nodes in nanoelectronics. Development of area-selective A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1449a2f781e6d41fa5374232403eebe7
https://doi.org/10.1021/acs.chemmater.9b02992
https://doi.org/10.1021/acs.chemmater.9b02992
Autor:
Wilhelmus M. M. Kessels, Marc J. M. Merkx, Shashank Balasubramanyam, Marcel A. Verheijen, Ageeth A. Bol, Adriaan J. M. Mackus
Publikováno v:
ACS Materials Letters, 2(5), 511-518. American Chemical Society
With downscaling of device dimensions, two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) such as WS 2 are being considered as promising materials for future applications in nanoelectronics. However, at these nanoscale regime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f532911cca4d3bf02346ffd3217337d
https://doi.org/10.1021/acsmaterialslett.0c00093
https://doi.org/10.1021/acsmaterialslett.0c00093
Autor:
Marc J. M. Merkx, Rick G. J. Jongen, A. Mameli, Wilhelmus M. M. Kessels, Paul C. Lemaire, Dennis M. Hausmann, K. Sharma, Adriaan J. M. Mackus
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 39(1):012402. AVS Science and Technology Society
As the semiconductor industry progresses toward more complex multilayered devices with ever smaller features, accurately aligning these layers with respect to each other has become a bottleneck in the advancement to smaller transistor nodes. To avoid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9ae3942a81d1da25c06d21178c3af54
https://research.tue.nl/nl/publications/3f414074-7ce4-4c7c-8474-1937bf05d7a9
https://research.tue.nl/nl/publications/3f414074-7ce4-4c7c-8474-1937bf05d7a9
Autor:
Marc J. M. Merkx, Jiaming Cai, Yanwei Wen, Kun Cao, Rong Chen, Yu-Xiao Lan, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus, Yao Jing
Publikováno v:
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 39(1):012404. AVS Science and Technology Society
Selective growth of metal oxides on metal via atomic layer deposition (ALD) has attracted great interest due to their potential applications in the semiconductor industry, as well as energy and environment fields. In this work, the influence of an ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c60fecfa2dcd8d4be29049c6dbe6edf7
https://doi.org/10.1116/6.0000668
https://doi.org/10.1116/6.0000668
Autor:
Yao, Jing, Marc J M, Merkx, Jiaming, Cai, Kun, Cao, Wilhelmus M M, Kessels, Adriaan J M, Mackus, Rong, Chen
Publikováno v:
ACS applied materialsinterfaces. 12(47)
Photoluminescence perovskite nanocrystals (NCs) have shown significant potential in optoelectronic applications in view of their narrow band emission with high photoluminescence quantum yields and color tunability. The main obstacle for practical app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::98712a0ea972a9e6af46e0cd77436416
https://pubmed.ncbi.nlm.nih.gov/33174735
https://pubmed.ncbi.nlm.nih.gov/33174735
Autor:
Marcel A. Verheijen, Tahsin Faraz, Wilhelmus M. M. Kessels, Marc J. M. Merkx, Sander Vlaanderen, Adriaan J. M. Mackus
Publikováno v:
Chemistry of Materials, 32(18), 7788-7795. American Chemical Society
Despite the rapid increase in the number of newly developed processes, area-selective atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low temperature is typically achieved by employing a plasma as the coreactant, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d83a9d80494e61892f2f0885fedf1ec4
https://research.tue.nl/nl/publications/c48392cb-94f6-4230-95de-ead54344e8a1
https://research.tue.nl/nl/publications/c48392cb-94f6-4230-95de-ead54344e8a1
Autor:
Shashank, Balasubramanyam, Marc J M, Merkx, Marcel A, Verheijen, Wilhelmus M M, Kessels, Adriaan J M, Mackus, Ageeth A, Bol
Publikováno v:
ACS Materials Letters
With downscaling of device dimensions, two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) such as WS2 are being considered as promising materials for future applications in nanoelectronics. However, at these nanoscale regimes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f845207076d1a61604de9f69c7c83bcf
https://pubmed.ncbi.nlm.nih.gov/32421046
https://pubmed.ncbi.nlm.nih.gov/32421046
Publikováno v:
Chemistry of Materials, 31(1), 2-12. American Chemical Society
Chemistry of Materials
Chemistry of Materials
Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37b28c278468e81bbe2da036cd367a37
https://research.tue.nl/nl/publications/cd1f6f01-b29d-4ba8-aa5a-10bed65b9961
https://research.tue.nl/nl/publications/cd1f6f01-b29d-4ba8-aa5a-10bed65b9961
Autor:
A. Mameli, Marc J. M. Merkx, Wilhelmus M. M. Kessels, Fred Roozeboom, Bora Karasulu, Adriaan J. M. Mackus
Publikováno v:
ACS Nano, 11(9), 9303-9311. American Chemical Society
ACS Nano, 9, 11, 9303-9311
ACS Nano
ACS Nano, 9, 11, 9303-9311
ACS Nano
Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a78dc8822e4e7de021e50961379963a8
https://research.tue.nl/nl/publications/24a0c1cb-d81c-46cf-8fec-0d31503029c4
https://research.tue.nl/nl/publications/24a0c1cb-d81c-46cf-8fec-0d31503029c4