Nonheteroepitaxial CsPbBr3/Cs4PbBr6 Interfaces Result in Nonpassivated Bright Bromide Vacancies

Autor: Eyal Cohen, Alina Nagel, Marc Fouchier, Larisa Popilevsky, Yaron Kauffmann, Sasha Khalfin, Shaked Dror, Yehonadav Bekenstein

Publikováno v: cm CHEMISTRY OF MATERIAL

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f03476b89ac4b5d076a8c1246b58bd5

Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stress

Autor: Merwan Mokhtari, Daniel T. Cassidy, Alain Moréac, Solène Gérard, Marc Fouchier, Christophe Levallois, Brahim Ahammou, Philippe Pagnod-Rossiaux, Erwine Pargon, Jean-Pierre Landesman, François Laruelle

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2020, 706, pp.138079. ⟨10.1016/j.tsf.2020.138079⟩
Thin Solid Films, 2020, 706, pp.138079. ⟨10.1016/j.tsf.2020.138079⟩

International audience; We measured the details of the strain/stress fields produced in GaAs(100) and InP(100) substrates by the presence of narrow dielectric stripes processed from thin films obtained by plasma-enhanced chemical vapor deposition wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67ce669a528ba0adaf7d8b86547ff37e
https://hal.archives-ouvertes.fr/hal-02876805

Polarized cathodoluminescence for strain measurement

Autor: Marc Fouchier, Erwine Pargon, Névine Rochat, Jean-Pierre Landesman

Publikováno v: Review of Scientific Instruments
Review of Scientific Instruments, American Institute of Physics, 2019, 90 (4), pp.043701. ⟨10.1063/1.5078506⟩
Review of Scientific Instruments, 2019, 90 (4), pp.043701. ⟨10.1063/1.5078506⟩

International audience; Strain can alter the properties of semiconductor materials. The selection of a strain measurement technique is a trade-off between sensitivity, resolution, and field of view, among other factors. We introduce a new technique b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2a498bbc4b07c0f570fd48b4ab4226f
https://hal.archives-ouvertes.fr/hal-02145940

Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

Autor: Marc Fouchier, Joyce Roque, Maria Fahed, Karine Rovayaz, Eugénie Martinez, Sébastien Labau, Denis Rouchon, Erwine Pargon, Jean-Pierre Landesman, Névine Rochat

Publikováno v: MRS Advances
MRS Advances, Cambridge University Press, 2018, 3 (57-58), pp.3373-3378. ⟨10.1557/adv.2018.448⟩
MRS Advances, 2018, 3 (57-58), pp.3373-3378. ⟨10.1557/adv.2018.448⟩

International audience; The effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the lu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab8b44912ebf04da75cb4713ddb0a814
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01904717

Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration

Autor: Jonathan Pradelles, Marc Fouchier, Emmanuel Dupuy, H. Grampeix, Erwine Pargon

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, AVS through the American Institute of Physics, 2016, 34 (5), ⟨10.1116/1.4962322⟩
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2016, 34 (5), ⟨10.1116/1.4962322⟩

Double patterning technology has now proved its efficiency to go beyond the standard lithographic printing limits and address the resolution requirements of the sub-20 nm technological node. However, some data are still lacking regarding the characte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eaabfb26938e8bd6978471c502b1f97
https://hal.univ-grenoble-alpes.fr/hal-01882435