Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Marc Füldner"'
Publikováno v:
IEEE Sensors Journal. 5:857-863
In this paper, advanced membrane designs are simulated in order to improve the sensitivity of micromachined silicon condenser microphones. Analytical analyzes and finite element simulations have been carried out to derive algebraic expressions for th
Publikováno v:
Journal of Micromechanics and Microengineering. 14:S86-S89
This paper presents the improvement of the signal-to-noise ratio of a silicon microphone by utilizing a high-impedance load resistor. A model is described which considers the acoustical and electrical parts of the microphone. Based on an equivalent c
Autor:
Marc Füldner
Publikováno v:
Tagungsband.
Publikováno v:
17th IEEE International Conference on Micro Electro Mechanical Systems. Maastricht MEMS 2004 Technical Digest.
This paper presents a Spice based model of a silicon microphone system. The model considers the acoustical, the mechanical as well as the electrical behaviour. The simulation results are compared with the measurements to focus on the well understood
Publikováno v:
IEEE Symposium on Ultrasonics, 2003.
We present a newly developed computer aided engineering (CAE) tool for the design of capacitative micromachined sound and ultrasound transducers. The numerical scheme is based on the finite element (FE) method and takes all relevant nonlinearities (g
Publikováno v:
Transducers ’01 Eurosensors XV ISBN: 9783540421504
A new silicon condenser microphone process for low stress diaphragm is presented. The diaphragm is formed either by a polysilicon layer or by a monocrystalline silicon layer of a silicon on insulator substrate (SOI). Acoustical sensitivities up to 8.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d185450190b43630c41fa87e87b2ea
https://doi.org/10.1007/978-3-642-59497-7_29
https://doi.org/10.1007/978-3-642-59497-7_29
Autor:
Udo Schwalke, Peter Schon, Katja Bothe, Dariusch Hadawi, Ingold Dipl Ing Janssen, Marc Füldner, Walter Zatsch
Publikováno v:
Japanese Journal of Applied Physics. 38:2232
In this work, through-the-gate implantation (TGI) of channel- and well-doping is favorably combined with n+/p+ gate implantation. This approach offers an additional degree of freedom to optimize dual-workfunction gates independently from the fabricat